40
100
40
40
220
t
ms
ms
ms
ms
ms
D ³
+
+
+
=
EQUATION1266 V1 EN-US
(Equation 35)
where it is considered that:
the operation time of overcurrent protection B1 is 40 ms
the breaker open time
is 100 ms
the resetting time of protection A1
is 40 ms and
the additional margin
is 40 ms
7.3
Directional residual overcurrent protection, four steps
EF4PTOC (51N/67N)
IP14509-1 v8
7.3.1
Identification
M14881-1 v6
Function description
IEC 61850
identification
IEC 60617
identification
ANSI/IEEE C37.2
device number
Directional residual overcurrent
protection, four steps
EF4PTOC
4(IN>)
4
alt
4
TEF-REVA V2 EN-US
51N_67N
7.3.2
Setting guidelines
IP14988-1 v1
M15282-3 v11
When inverse time overcurrent characteristic is selected, the trip time
of the stage will be the sum of the inverse time delay and the set
definite time delay. Thus, if only the inverse time delay is required, it is
important to set the definite time delay for that stage to zero.
The parameters for the four step residual overcurrent protection are set via the local
HMI or PCM600. The following settings can be done for the function.
Common base IED values for primary current (
IBase
), primary voltage (
UBase
) and
primary power (
SBase
) are set in the global base values for settings function
GBASVAL.
GlobalBaseSel
: This is used to select GBASVAL function for reference of base values.
1MRK 505 370-UUS A
Section 7
Current protection
Busbar protection REB670 2.2 ANSI
197
Application manual
Summary of Contents for RELION REB670
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