H81 Pro-G
49
English
DRAM Coniguration
CAS# Latency (tCL)
he time between sending a column address to the memory and the beginning of the data
in response.
RAS# to CAS# Delay (tRCD)
he number of clock cycles required between the opening of a row of memory and
accessing columns within it.
Row Precharge Time (tRP)
he number of clock cycles required between the issuing of the precharge command
and opening the next row.
RAS# Active Time (tRAS)
he number of clock cycles required between a bank active command and issuing the
precharge command.
Command Rate (CR)
he delay between when a memory chip is selected and when th
e irst active command can
be issued.
Write Recovery Time (tWR)
he amount of delay that must elapse ater the completion of a valid write operation,
before an active bank can be precharged.
Summary of Contents for H81 Pro-G
Page 1: ...H81 Pro G H81 Pro G H81 Pro G H81 Pro G ...
Page 15: ...H81 Pro G 11 English 4 5 3 ...
Page 17: ...H81 Pro G 13 English 2 2 Installing the CPU Fan and Heatsink 1 2 C P U _ F A N ...
Page 19: ...H81 Pro G 15 English 1 2 3 ...
Page 66: ...62 English Device Mode Select the device mode according to your connected device ...
