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2 Megabit (256K x 8) Multi-Purpose Flash
SST39VF020
Preliminary Specifications
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© 1999 Silicon Storage Technology, Inc.The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MPF is a trademark of Silicon Storage Technology, Inc.
336-04 1/99
These specifications are subject to change without notice.
FEATURES:
•
Organized as 256K X 8
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Single 2.7-3.6V Read and Write Operations
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Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
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Low Power Consumption:
– Active Current: 10 mA (typical)
– Standby Current: 10 µA (typical)
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Sector Erase Capability
– Uniform 4 KByte sectors
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Fast Read Access Time:
– 70 and 90 ns
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Latched Address and Data
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Fast Sector Erase and Byte Program:
– Sector Erase Time: 18 ms typical
– Chip Erase Time: 70 ms typical
– Byte Program time: 14 µs typical
– Chip Rewrite Time: 4 seconds typical
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Automatic Write Timing
– Internal V
pp
Generation
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End of Write Detection
– Toggle Bit
– Data# Polling
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CMOS I/O Compatibility
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JEDEC Standard
– EEPROM Pinouts and command set
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Packages Available
– 32-Pin PDIP
– 32-Pin PLCC
– 32-Pin TSOP (8x14mm)
PRODUCT DESCRIPTION
The SST39VF020 is a 256K x 8 CMOS Multi-Purpose
Flash (MPF) manufactured with SST’s proprietary, high
performance CMOS SuperFlash technology. The split
gate cell design and thick oxide tunneling injector attain
better reliability and manufacturability compared with
alternate approaches. The SST39VF020 device writes
(Program or Erase) with a 2.7-3.6V power supply. The
SST39VF020 device conforms to JEDEC standard
pinouts for x8 memories.
Featuring high performance byte program, the
SST39VF020 device provides a maximum byte-pro-
gram time of 20 µsec. The entire memory can be erased
and programmed byte by byte typically in 4 seconds,
when using interface features such as Toggle Bit or
Data# Polling to indicate the completion of Program
operation. To protect against inadvertent write, the
SST39VF020 device has on-chip hardware and soft-
ware data protection schemes. Designed, manufac-
tured, and tested for a wide spectrum of applications, the
SST39VF020 device is offered with a guaranteed endur-
ance of 10,000 cycles. Data retention is rated at greater
than 100 years.
The SST39VF020 device is suited for applications that
require convenient and economical updating of program,
configuration, or data memory. For all system applica-
tions, the SST39VF020 device significantly improves
performance and reliability, while lowering power con-
sumption. The SST39VF020 inherently uses less en-
ergy during erase and program than alternative flash
technologies. The total energy consumed is a function of
the applied voltage, current, and time of application.
Since for any given voltage range, the SuperFlash tech-
nology uses less current to program and has a shorter
erase time, the total energy consumed during any Erase
or Program operation is less than alternative flash tech-
nologies. The SST39VF020 device also improves flex-
ibility while lowering the cost for program, data, and
configuration storage applications.
The SuperFlash technology provides fixed Erase and
Program times, independent of the number of endurance
cycles that have occurred. Therefore the system soft-
ware or hardware does not have to be modified or de-
rated as is necessary with alternative flash technologies,
whose erase and program times increase with accumu-
lated endurance cycles.
To meet high density, surface mount requirements, the
SST39VF020 device is offered in 32-pin TSOP and 32-
pin PLCC packages. A 600 mil, 32-pin PDIP is also
available. See Figures 1 and 2 for pinouts.
Device Operation
Commands are used to initiate the memory operation
functions of the device. Commands are written to the
device using standard microprocessor write sequences.
A command is written by asserting WE# low while
Summary of Contents for PV420S
Page 1: ...SERVICE MANUAL PV420S WWW BBK RU ...
Page 72: ... 69 CXD3068Q Block Diagram ...
Page 73: ... 70 CXD3068Q Pin Configuration ...
Page 122: ... 119 CXD3068Q Timing Chart 1 3 ...
Page 123: ... 120 CXD3068Q Timing Chart 1 4 ...
Page 124: ... 121 CXD3068Q Timing Chart 1 5 ...
Page 129: ... 126 CXD3068Q Timing Chart 2 1 ...
Page 130: ... 127 CXD3068Q Block Diagram 2 2 ...
Page 131: ... 128 CXD3068Q Timing Chart 2 3 ...
Page 134: ... 131 CXD3068Q Timing Chart 2 6 ...
Page 138: ... 135 CXD3068Q VCO C Mode Fig 3 3 Access Flow Chart Using VCO Control ...
Page 140: ... 137 CXD3068Q Block Diagram 4 1 ...
Page 143: ... 140 CXD3068Q Timing Chart 4 4 ...
Page 147: ... 144 CXD3068Q Fig 4 6 a Auto Focus Flow Chart Fig 4 6 b Auto Focus Timing Chart ...
Page 148: ... 145 CXD3068Q Fig 4 7 a 1 Track Jump Flow Chart Fig 4 7 b 1 Track Jump Timing Chart ...
Page 149: ... 146 CXD3068Q Fig 4 8 a 10 Track Jump Flow Chart Fig 4 8 b 10 Track Jump Timing Chart ...
Page 150: ... 147 CXD3068Q Fig 4 9 a 2N Track Jump Flow Chart Fig 4 9 b 2N Track Jump Timing Chart ...
Page 151: ... 148 CXD3068Q Fig 4 10 a Fine Search Flow Chart Fig 4 10 b Fine Search Timing Chart ...
Page 152: ... 149 CXD3068Q Fig 4 11 a M Track Move Flow Chart Fig 4 11 b M Track Move Timing Chart ...
Page 157: ... 154 CXD3068Q Fig 4 15 CD TEXT Data Timing Chart ...
Page 162: ... 159 CXD3068Q Fig 5 3a Fig 5 3b ...
Page 196: ... 193 CXD3068Q Description of Data Readout ...
Page 200: ... 197 CXD3068Q ...
Page 201: ... 198 CXD3068Q ...
Page 202: ... 199 CXD3068Q ...
Page 207: ... 204 CXD3068Q Package Outline Unit mm ...
Page 208: ...This data sheet has been made from recycled paper to help protect the environment 205 ...
