213
© 1999 Silicon Storage Technology, Inc.
336-04 1/99
2 Megabit Multi-Purpose Flash
SST39VF020
Preliminary Specifications
T
ABLE
6: R
ECOMMENDED
S
YSTEM
P
OWER
-
UP
T
IMINGS
Symbol
Parameter
Minimum
Units
T
PU-READ
(1)
Power-up to Read Operation
100
µs
T
PU-WRITE
(1)
Power-up to Write Operation
100
µs
336 PGM T6.0
T
ABLE
7: C
APACITANCE
(Ta = 25 °C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
Maximum
C
I/O
(1)
I/O Pin Capacitance
V
I/O
= 0V
12 pF
C
IN
(1)
Input Capacitance
V
IN
= 0V
6 pF
Note:
(1)
This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
336 PGM T7.0
T
ABLE
8: R
ELIABILITY
C
HARACTERISTICS
Symbol
Parameter
Minimum Specification
Units
Test Method
N
END
(1)
Endurance
10,000
Cycles
JEDEC Standard A117
T
DR
(1)
Data Retention
100
Years
JEDEC Standard A103
V
ZAP_HBM
(1)
ESD Susceptibility
1000
Volts
JEDEC Standard A114
Human Body Model
V
ZAP_MM
(1)
ESD Susceptibility
200
Volts
JEDEC Standard A115
Machine Model
I
LTH
(1)
Latch Up
100 + I
DD
mA
JEDEC Standard 78
Note:
(1)
This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
336 PGM T8.1
T
ABLE
5: DC O
PERATING
C
HARACTERISTICS
V
DD
= 2.7-3.6V
Limits
Symbol Parameter
Min
Max
Units
Test Conditions
I
DD
Power Supply Current
CE#=OE#=V
IL,
WE#=V
IH
, all I/Os open,
Read
12
mA
Address input = V
IL
/V
IH
, at f=1/T
RC
Min.,
V
DD
=V
DD
Max
Write
15
mA
CE#=WE#=V
IL,
OE#=V
IH,
V
DD
=V
DD
Max.
I
SB
Standby V
DD
Current
15
µA
CE#=V
IHC
, V
DD
= V
DD
Max.
I
LI
Input Leakage Current
1
µA
V
IN
=GND to V
DD
, V
DD
= V
DD
Max.
I
LO
Output Leakage Current
1
µA
V
OUT
=GND to V
DD
, V
DD
= V
DD
Max.
V
IL
Input Low Voltage
0.8
V
V
DD
= V
DD
Min.
V
IH
Input High Voltage
2.0
V
V
DD
= V
DD
Max.
V
IHC
Input High Voltage (CMOS) V
DD
-0.3
V
V
DD
= V
DD
Max.
V
OL
Output Low Voltage
0.4
V
I
OL
= 100 µA, V
DD
= V
DD
Min.
V
OH
Output High Voltage
2.4
V
I
OH
= -100µA, V
DD
= V
DD
Min.
V
H
Supervoltage for A
9
pin
11.4
12.6
V
CE# = OE# =V
IL
, WE# = V
IH
I
H
Supervoltage Current
200
µA
CE# = OE# = V
IL
, WE# = V
IH
, A
9
= V
H
Max.
for A
9
pin
336 PGM T5.1
Summary of Contents for PV420S
Page 1: ...SERVICE MANUAL PV420S WWW BBK RU ...
Page 72: ... 69 CXD3068Q Block Diagram ...
Page 73: ... 70 CXD3068Q Pin Configuration ...
Page 122: ... 119 CXD3068Q Timing Chart 1 3 ...
Page 123: ... 120 CXD3068Q Timing Chart 1 4 ...
Page 124: ... 121 CXD3068Q Timing Chart 1 5 ...
Page 129: ... 126 CXD3068Q Timing Chart 2 1 ...
Page 130: ... 127 CXD3068Q Block Diagram 2 2 ...
Page 131: ... 128 CXD3068Q Timing Chart 2 3 ...
Page 134: ... 131 CXD3068Q Timing Chart 2 6 ...
Page 138: ... 135 CXD3068Q VCO C Mode Fig 3 3 Access Flow Chart Using VCO Control ...
Page 140: ... 137 CXD3068Q Block Diagram 4 1 ...
Page 143: ... 140 CXD3068Q Timing Chart 4 4 ...
Page 147: ... 144 CXD3068Q Fig 4 6 a Auto Focus Flow Chart Fig 4 6 b Auto Focus Timing Chart ...
Page 148: ... 145 CXD3068Q Fig 4 7 a 1 Track Jump Flow Chart Fig 4 7 b 1 Track Jump Timing Chart ...
Page 149: ... 146 CXD3068Q Fig 4 8 a 10 Track Jump Flow Chart Fig 4 8 b 10 Track Jump Timing Chart ...
Page 150: ... 147 CXD3068Q Fig 4 9 a 2N Track Jump Flow Chart Fig 4 9 b 2N Track Jump Timing Chart ...
Page 151: ... 148 CXD3068Q Fig 4 10 a Fine Search Flow Chart Fig 4 10 b Fine Search Timing Chart ...
Page 152: ... 149 CXD3068Q Fig 4 11 a M Track Move Flow Chart Fig 4 11 b M Track Move Timing Chart ...
Page 157: ... 154 CXD3068Q Fig 4 15 CD TEXT Data Timing Chart ...
Page 162: ... 159 CXD3068Q Fig 5 3a Fig 5 3b ...
Page 196: ... 193 CXD3068Q Description of Data Readout ...
Page 200: ... 197 CXD3068Q ...
Page 201: ... 198 CXD3068Q ...
Page 202: ... 199 CXD3068Q ...
Page 207: ... 204 CXD3068Q Package Outline Unit mm ...
Page 208: ...This data sheet has been made from recycled paper to help protect the environment 205 ...
