CY7C1012DV33
Document Number: 38-05610 Rev. *D
Page 3 of 11
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65
°
C to +150
°
C
Ambient Temperature with
Power Applied ............................................ –55
°
C to +125
°
C
Supply Voltage on V
CC
Relative to GND
[2]
....–0.5V to +4.6V
DC Voltage Applied to Outputs
in High-Z State
[2]
.................................. –0.5V to V
CC
+ 0.5V
DC Input Voltage
[2]
............................... –0.5V to V
CC
+ 0.5V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage............. ...............................>2001V
(MIL-STD-883, Method 3015)
Latch Up Current ..................................................... >200 mA
Operating Range
Range
Ambient
Temperature
V
CC
Industrial
–40
°
C to +85
°
C
3.3V
±
0.3V
DC Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
[3]
–10
Unit
Min
Max
V
OH
Output HIGH Voltage
V
CC
= Min, I
OH
= –4.0 mA
2.4
V
V
OL
Output LOW Voltage
V
CC
= Min, I
OL
= 8.0 mA
0.4
V
V
IH
Input HIGH Voltage
2.0
V
CC
+ 0.3
V
V
IL
[2]
Input LOW Voltage
–0.3
0.8
V
I
IX
Input Leakage Current
GND < V
I
< V
CC
–1
+1
μ
A
I
OZ
Output Leakage Current
GND < V
OUT
< V
CC
, output disabled
–1
+1
μ
A
I
CC
V
CC
Operating Supply
Current
V
CC
= Max, f = f
MAX
= 1/t
RC
I
OUT
= 0 mA CMOS levels
175
mA
I
SB1
Automatic CE Power Down
Current —TTL Inputs
Max V
CC
, CE > V
IH
V
IN
> V
IH
or V
IN
< V
IL
, f = f
MAX
30
mA
I
SB2
Automatic CE Power Down
Current —CMOS Inputs
Max V
CC
, CE > V
CC
– 0.3V,
V
IN
> V
CC
– 0.3V, or V
IN
< 0.3V, f = 0
25
mA
Notes
2. V
IL
(min) = –2.0V and V
IH
(max) = V
CC
+ 2V for pulse durations of less than 20 ns.
3. CE indicates a combination of all three chip enables. When active LOW, CE indicates the CE
1
or CE
2 ,
or CE
3
is LOW. When HIGH, CE indicates the CE
1 ,
CE
2 ,
and
CE
3
are HIGH.
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