CY7C1012DV33
Document Number: 38-05610 Rev. *D
Page 4 of 11
Capacitance
Tested initially and after any design or process changes that may affect these parameters
.
Parameter
Description
Test Conditions
Max
Unit
C
IN
Input Capacitance
T
A
= 25
°
C, f = 1 MHz, V
CC
= 3.3V
8
pF
C
OUT
I/O Capacitance
10
pF
Thermal Resistance
Tested initially and after any design or process changes that may affect these parameters.
Parameter
Description
Test Conditions
119-Ball
PBGA
Unit
Θ
JA
Thermal Resistance
(junction to ambient)
Still air, soldered on a 3 × 4.5 inch,
four layer printed circuit board
20.31
°
C/W
Θ
JC
Thermal Resistance
(junction to case)
8.35
°
C/W
Figure 2. AC Test Loads and Waveforms
[4]
90%
10%
3.0V
GND
90%
10%
All input pulses
3.3V
OUTPUT
5 pF*
(a)
(b)
R1 317
Ω
R2
351
Ω
Fall Time:> 1V/ns
(c)
OUTPUT
50
Ω
Z0= 50
Ω
V
TH
= 1.5V
30 pF*
*
Capacitive Load consists of all
components of the test environment
Rise Time > 1V/ns
*Including jig
and scope
Note
4. Valid SRAM operation does not occur until the power supplies have reached the minimum operating V
DD
(3.0V). 100
μ
s (t
power
) after reaching the minimum operating
V
DD
, normal SRAM operation begins including reduction in V
DD
to the data retention (V
CCDR
, 2.0V) voltage.
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