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BIOS Setup
CAS# Latency (Tcl)
This field is used to select the clock cycle of the CAS latency time.
The option selected specifies the timing delay before SDRAM starts
a read command after receiving it.
Min RAS# Active Time (Tras)
This field is used to select the minimum time RAS takes to read
from and write to a memory cell.
RAS# to CAS# Delay (Trcd)
When DRAM refreshes, both rows and columns are addressed
separately. This field is used to select the delay time from RAS (Row
Address Strobe) to CAS (Column Address Strobe) when reading
and writing to the same bank. The lesser the clock cycle, the faster
the DRAM’s performance.
Row Precharge Time (Trp)
This field is used to select the number of cycles that is allowed for
Row Address Strobe (RAS) to precharge. If insufficient time is
allowed for the RAS to accumulate its charge before DRAM
refreshes, refreshing may be incomplete and DRAM may fail to retain
data.
Row to Row Delay (Trrd)
This field is used to select the row to row delay time of different
banks.
Row Cycle Time (Trc)
This field is used to select the row cycle time, RAS# active or auto
refresh of the same bank.
Row Refresh Cyc Time (Trfc)
This field is used to select the row refresh cycle time. Auto refresh
active to RAS# active or RAS# to auto refresh - similar to Trc.