Epson Research and Development
Page 47
Vancouver Design Center
Hardware Functional Specification
S1D13504
Issue Date: 01/11/06
X19A-A-002-19
Table 7-7: EDO DRAM Read Timing
Symbol
Parameter
Min Typ
Max
Units
t1
Memory clock period
25
ns
t2
Random read or write cycle time (REG[22h] bits [6:5] = 00)
5 t1
ns
Random read or write cycle time (REG[22h] bits [6:5] = 01)
4 t1
ns
Random read or write cycle time (REG[22h] bits [6:5] = 10)
3 t1
ns
t3
Row address setup time (REG[22h] bits [3:2] = 00)
2.45 t1
ns
Row address setup time (REG[22h] bits [3:2] = 01)
2 t1
ns
Row address setup time (REG[22h] bits [3:2] = 10)
1.45 t1
ns
t4
Row address hold time (REG[22h] bits [3:2] = 00 or 10)
0.45 t1 - 1
ns
Row address hold time (REG[22h] bits [3:2] = 01)
t1 - 1
ns
t5
Column address setup time
0.45 t1 - 1
ns
t6
Column address hold time
0.45 t1 - 1
ns
t7
CAS# pulse width
0.45 t1
0.55 t1 + 1
ns
t8
CAS# precharge time
0.45 t1 - 1
0.55 t1
ns
t9
RAS# hold time
1 t1
ns
t10
RAS# precharge time (REG[22h] bits [3:2] = 00)
2 t1 - 1
ns
RAS# precharge time (REG[22h] bits [3:2] = 01)
1.45 t1 - 1
ns
RAS# precharge time (REG[22h] bits [3:2] = 10)
1 t1 - 1
ns
t11
RAS# to CAS# delay time
(REG[22h] bit 4 = 0 and bits [3:2] = 00 or 10)
2 t1 - 2
2 t1
ns
RAS# to CAS# delay time
(REG[22h] bit 4 = 1 and bits [3:2] = 00 or 10)
1 t1 - 2
1 t1
ns
RAS# to CAS# delay time (REG[22h] bits [3:2] = 01)
1.45 t1 - 2
1.55 t1
ns
t12
Access time from RAS#
(REG[22h] bit 4 = 0 and bits [3:2] = 00 or 10)
3 t1 - 11
ns
Access time from RAS#
(REG[22h] bit 4 = 1 and bits [3:2] = 00 or 10)
2 t1 - 11
ns
Access time from RAS# (REG[22h] bits [3:2] = 01)
2.45 t1 - 12
ns
t13
Access time from CAS#
t1 - 10
ns
t14
Access time from CAS# precharge, column address
1.45 t1 - 6
ns
t15
Read Data hold after CAS# low
2
ns
t16
Read Data turn-off delay from RAS#
2
ns