Epson Research and Development
Page 51
Vancouver Design Center
Hardware Functional Specification
S1D13504
Issue Date: 01/11/06
X19A-A-002-19
Table 7-9: EDO DRAM Read-Write Timing
Symbol
Parameter
Min Typ
Max
Units
t1
Memory clock period
25
ns
t2
Random read or write cycle time (REG[22h] bits [6:5] = 00)
5 t1
ns
Random read or write cycle time (REG[22h] bits [6:5] = 01)
4 t1
ns
Random read or write cycle time (REG[22h] bits [6:5] = 10)
3 t1
ns
t3
Row address setup time (REG[22h] bits [3:2] = 00)
2.45 t1
ns
Row address setup time (REG[22h] bits [3:2] = 01)
2 t1
ns
Row address setup time (REG[22h] bits [3:2] = 10)
1.45 t1
ns
t4
Row address hold time (REG[22h] bits [3:2] = 00 or 10)
0.45 t1 - 1
ns
Row address hold time (REG[22h] bits [3:2] = 01)
t1 - 1
ns
t5
Column address setup time
0.45 t1 - 1
ns
t6
Column address hold time
0.45 t1 - 1
ns
t7
RAS# precharge time (REG[22h] bits [3:2] = 00)
2 t1 - 1
ns
RAS# precharge time (REG[22h] bits [3:2] = 01)
1.45 t1 - 1
ns
RAS# precharge time (REG[22h] bits [3:2] = 10)
1 t1 - 1
ns
t8
RAS# to CAS# delay time
(REG[22h] bit 4 = 0 and bits [3:2] = 00 or 10)
2 t1 - 2
2 t1
ns
RAS# to CAS# delay time
(REG[22h] bit 4 = 1 and bits [3:2] = 00 or 10)
1 t1 - 2
1 t1
ns
RAS# to CAS# delay time (REG[22h] bits [3:2] = 01)
1.45 t1 - 2
1.55 t1
ns
t9
Read Data turn-off delay from WE#
0
ns
t10
Write Data delay from WE# (REG[22h] bit 7 = 0)
1.45 t1
ns
Write Data delay from WE# (REG[22h] bit 7 = 1)
0.45 t1
ns