Page 68
Epson Research and Development
Vancouver Design Center
S1D13505
Hardware Functional Specification
X23A-A-001-14
Issue Date: 01/02/02
7.3.3 EDO-DRAM Self-Refresh Timing
Figure 7-17: EDO-DRAM Self-Refresh Timing
Table 7-17: EDO-DRAM Self-Refresh Timing
Symbol
Parameter
Min Max
Units
t1
Internal memory clock period
25
ns
t2
RAS# precharge time (REG[22h] bits 3-2 = 00)
2 t1 - 3
ns
RAS# precharge time (REG[22h] bits 3-2 = 01)
1.45t1 - 3
ns
RAS# precharge time (REG[22h] bits 3-2 = 10)
1 t1 - 3
ns
t3
RAS# to CAS# precharge time (REG[22h] bits 3-2 = 00)
1.45t1 - 3
ns
RAS# to CAS# precharge time (REG[22h] bits 3-2 = 01 or 10)
0.45t1 - 3
ns
t4
CAS# setup time (REG[22h] bits 3-2 = 00 or 10)
0.45t1 - 3
ns
CAS# setup time (REG[22h] bits 3-2 = 01)
1 t1 - 3
ns
t5
CAS# precharge time (REG[22h] bits 3-2 = 00)
2 t1 - 3
ns
CAS# precharge time (REG[22h] bits 3-2 = 01 or 10)
1 t1 - 3
ns
RAS#
CAS#
t5
t3
t4
t2
Memory
Clock
Stopped for
suspend mode
Restarted for
active mode
t1