FSD200
3
Electrical Characteristics
(Ta=25
°
C unless otherwise specified)
Note:
1. These parameters, although guaranteed, are not 100% tested in production
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
SENSEFET SECTION
Drain-Source Breakdown Voltage
BV
dss
V
CC
= 0V, I
D
= 100
µ
A
700
-
-
V
Off-State Current
I
dss
V
DS
= 560V
-
-
100
µ
A
On-State Resistence
R
DS(ON)
Tj = 25
°
C, I
D
= 25mA
-
28
32
Ω
Tj = 100
°
C, I
D
= 25mA
-
42
48
Ω
Rise Time
T
R
V
DS
= 325V, I
D
= 50mA
-
100
-
nS
Fall Time
T
F
V
DS
= 325V, l
D
= 25mA
-
50
-
nS
CONTROL SECTION
Output Frequency
Fosc
Tj = 25
°
C
126
134
142
kHz
-
±4
-
Feedback Source Current
Ifb
Vfb = 0V
0.22
0.25
0.28
mA
Maximum Duty Cycle
Dmax
Vfb = 3.5V
60
64
68
%
Minimum Duty Cycle
Dmin
Vfb = 0V
0
0
0
%
Supply Regulation High Voltage
Vregh
-
7
-
V
Supply Regulation Low Voltage
Vregl
-
6
-
V
Supply Shunt Regulator
V
CCreg
-
-
7
-
V
Internal Soft Start Time
T
S/S
-
3
-
mS
BURST MODE SECTION
Burst Mode Voltage
V
BURST
Hysteresis
-
0.64
-
V
-
60
-
mV
PROTECTION SECTION
Drain to Source Peak Current Limit
Iover
0.26
0.30
0.34
A
Thermal Shutdown Temperature (Tj)
(1)
T
SD
Hysteresis
125
145
-
°
C
-
50
-
°
C
Shutdown Feedback Voltage
V
SD
-
3.5
4.0
4.5
V
Feedback Shutdown Delay Current
I
delay
Vfb = 4.0V
3
5
7
uA
TOTAL DEVICE SECTION
Operating Supply Current
I
OP
Vcc = 7V
-
0.6
-
mA
Start Up Current
Istart
Vcc = 0V
-
0.8
1.0
mA
