Chapter 28 768 KByte Flash Module (S12XFTM768K4V2)
MC9S12XE-Family Reference Manual , Rev. 1.19
1118
Freescale Semiconductor
28.4.2.6
Program P-Flash Command
The Program P-Flash operation will program a previously erased phrase in the P-Flash memory using an
embedded algorithm.
CAUTION
A P-Flash phrase must be in the erased state before being programmed.
Cumulative programming of bits within a Flash phrase is not allowed.
Upon clearing CCIF to launch the Program P-Flash command, the Memory Controller will program the
data words to the supplied global address and will then proceed to verify the data words read back as
expected. The CCIF flag will set after the Program P-Flash operation has completed.
Table 28-43. Program P-Flash Command FCCOB Requirements
CCOBIX[2:0]
FCCOB Parameters
000
0x06
Global address [22:16] to
identify P-Flash block
001
Global address [15:0] of phrase location to be programmed
(1)
1. Global address [2:0] must be 000
010
Word 0 program value
011
Word 1 program value
100
Word 2 program value
101
Word 3 program value
Table 28-44. Program P-Flash Command Error Handling
Register
Error Bit
Error Condition
FSTAT
ACCERR
Set if CCOBIX[2:0] != 101 at command launch
Set if command not available in current mode (see
)
Set if an invalid global address [22:0] is supplied
(1)
1. As defined by the memory map for FTM1024K5.
Set if a misaligned phrase address is supplied (global address [2:0] != 000)
Set if a Load Data Field command sequence is currently active and the selected
block has previously been selected in the same command sequence
Set if a Load Data Field command sequence is currently active and global
address [17:0] does not match that previously supplied in the same command
sequence
FPVIOL
Set if the global address [22:0] points to a protected area
MGSTAT1
Set if any errors have been encountered during the verify operation
MGSTAT0
Set if any non-correctable errors have been encountered during the verify
operation
FERSTAT
EPVIOLIF
None
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