Appendix A Electrical Characteristics
MC9S12XE-Family Reference Manual Rev. 1.19
Freescale Semiconductor
1231
A.3.2
NVM Reliability Parameters
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
The data retention and program/erase cycling failure rates are specified at the operating conditions noted.
The program/erase cycle count on the sector is incremented every time a sector or mass erase event is
executed.
The standard shipping condition for both the D-Flash and P-Flash memory is erased with security disabled.
However it is recommended that each block or sector is erased before factory programming to ensure that
the full data retention capability is achieved. Data retention time is measured from the last erase operation.
Table A-20. NVM Reliability Characteristics
Conditions are shown in
Num
C
Rating
Symbol
Min
Typ
Max
Unit
P-Flash Arrays
1
C Data retention at an average junction temperature of T
Javg
=
85
°
C
1
after up to 10,000 program/erase cycles
t
PNVMRET
15
100
2
—
Years
2
C Data retention at an average junction temperature of T
Javg
=
85
°
C
3
after less than 100 program/erase cycles
t
PNVMRET
20
100
—
Years
3
C P-Flash number of program/erase cycles
(-40
°
C
≤
tj
≤
150
°
C
)
n
PFLPE
10K
100K
—
Cycles
D-Flash Array
4
C Data retention at an average junction temperature of T
Javg
=
85
°
C
after up to 50,000 program/erase cycles
t
DNVMRET
5
100
—
Years
5
C Data retention at an average junction temperature of T
Javg
=
85
°
C
after less than 10,000 program/erase cycles
t
DNVMRET
10
100
—
Years
6
C Data retention at an average junction temperature of T
Javg
=
85
°
C
after less than 100 program/erase cycles
t
DNVMRET
20
100
—
Years
7
C D-Flash number of program/erase cycles (-40
°
C
≤
tj
≤
150
°
C
)
n
DFLPE
50K
500K
—
Cycles
Emulated EEPROM
8
C Data retention at an average junction temperature of T
Javg
=
85
°
C
after spec. program/erase cycles
t
EENVMRET
5
100
—
Years
9
C Data retention at an average junction temperature of T
Javg
=
85
°
C
after less than 20% spec.program/erase cycles.
(e.g. after <20,000 cycles / Spec 100,000 cycles)
t
EENVMRET
10
100
—
Years
10
C Data retention at an average junction temperature of T
Javg
=
85
°
C
after less than 0.2% spec. program/erase cycles
(e.g. after < 200 cycles / Spec 100,000 cycles)
t
EENVMRET
20
100
—
Years
11
C EEPROM number of program/erase cycles with a ratio of
EEE_NVM to EEE_RAM = 8 (-40
°
C
≤
tj
≤
150
°
C
)
n
EEPE
100K
4
1M
5
—
Cycles
12
C EEPROM number of program/erase cycles with a ratio of
EEE_NVM to EEE_RAM = 128 (-40
°
C
≤
tj
≤
150
°
C
)
n
EEPE
3M
30M
—
Cycles
13
C EEPROM number of program/erase cycles with a ratio of
EEE_NVM to EEE_RAM = 16384
6
(-40
°
C
≤
tj
≤
150
°
C
)
n
EEPE
325M
—
Cycles
Because
of
an
order
from
the
United
States
International
Trade
Commission,
BGA-packaged
product
lines
and
part
numbers
indicated
here
currently
are
not
available
from
Freescale
for
import
or
sale
in
the
United
States
prior
to
September
2010:
S12XE
products
in
208
MAPBGA
packages
