Chapter 28 768 KByte Flash Module (S12XFTM768K4V2)
MC9S12XE-Family Reference Manual , Rev. 1.19
1126
Freescale Semiconductor
CAUTION
Field margin levels must only be used during verify of the initial factory
programming.
NOTE
Field margin levels can be used to check that Flash memory contents have
adequate margin for data retention at the normal level setting. If unexpected
results are encountered when checking Flash memory contents at field
margin levels, the Flash memory contents should be erased and
reprogrammed.
28.4.2.15 Full Partition D-Flash Command
The Full Partition D-Flash command allows the user to allocate sectors within the D-Flash block for
applications and a partition within the buffer RAM for EEPROM access. The D-Flash block consists of
128 sectors with 256 bytes per sector.
Upon clearing CCIF to launch the Full Partition D-Flash command, the following actions are taken to
define a partition within the D-Flash block for direct access (DFPART) and a partition within the buffer
RAM for EEE use (ERPART):
•
Validate the DFPART and ERPART values provided:
— DFPART <= 128 (maximum number of 256 byte sectors in D-Flash block)
Table 28-62. Set Field Margin Level Command Error Handling
Register
Error Bit
Error Condition
FSTAT
ACCERR
Set if CCOBIX[2:0] != 001 at command launch
Set if a Load Data Field command sequence is currently active
Set if command not available in current mode (see
)
Set if an invalid global address [22:16] is supplied
(1)
1. As defined by the memory map for FTM1024K5.
Set if an invalid margin level setting is supplied
FPVIOL
None
MGSTAT1
None
MGSTAT0
None
FERSTAT
EPVIOLIF
None
Table 28-63. Full Partition D-Flash Command FCCOB Requirements
CCOBIX[2:0]
FCCOB Parameters
000
0x0F
Not required
001
Number of 256 byte sectors for the D-Flash user partition (DFPART)
010
Number of 256 byte sectors for buffer RAM EEE partition (ERPART)
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an
order
from
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United
States
International
Trade
Commission,
BGA-packaged
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import
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sale
in
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prior
to
September
2010:
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products
in
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