Chapter 25 256 KByte Flash Module (S12XFTM256K2V1)
MC9S12XE-Family Reference Manual , Rev. 1.19
894
Freescale Semiconductor
•
Fast sector erase and word program operation
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Ability to program up to four words in a burst sequence
25.1.2.3
Emulated EEPROM Features
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Up to 4 Kbytes of emulated EEPROM (EEE) accessible as 4 Kbytes of RAM
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Flexible protection scheme to prevent accidental program or erase of data
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Automatic EEE file handling using an internal Memory Controller
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Automatic transfer of valid EEE data from D-Flash memory to buffer RAM on reset
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Ability to monitor the number of outstanding EEE related buffer RAM words left to be
programmed into D-Flash memory
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Ability to disable EEE operation and allow priority access to the D-Flash memory
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Ability to cancel all pending EEE operations and allow priority access to the D-Flash memory
25.1.2.4
User Buffer RAM Features
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Up to 4 Kbytes of RAM for user access
25.1.2.5
Other Flash Module Features
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No external high-voltage power supply required for Flash memory program and erase operations
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Interrupt generation on Flash command completion and Flash error detection
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Security mechanism to prevent unauthorized access to the Flash memory
25.1.3
Block Diagram
The block diagram of the Flash module is shown in
.
Because
of
an
order
from
the
United
States
International
Trade
Commission,
BGA-packaged
product
lines
and
part
numbers
indicated
here
currently
are
not
available
from
Freescale
for
import
or
sale
in
the
United
States
prior
to
September
2010:
S12XE
products
in
208
MAPBGA
packages
