Appendix A Electrical Characteristics
Freescale Semiconductor
MC9S12C-Family / MC9S12GC-Family
671
Rev 01.24
Table A-18. NVM Timing Characteristics
Conditions are shown in
Num
C
Rating
Symbol
Min
Typ
Max
Unit
1
D
External Oscillator Clock
f
NVMOSC
0.5
—
50
(1)
1. Restrictions for oscillator in crystal mode apply!
MHz
2
D
Bus frequency for Programming or Erase Operations
f
NVMBUS
1
—
MHz
3
D
Operating Frequency
f
NVMOP
150
—
200
kHz
4
P
Single Word Programming Time
t
swpgm
46
(2)
2. Minimum Programming times are achieved under maximum NVM operating frequency f
NVMOP
and maximum bus frequency
f
bus
.
—
74.5
(3)
3. Maximum Erase and Programming times are achieved under particular combinations of f
NVMOP
and bus frequency f bus. Refer
to formulae in Sections A.3.1.1 - A.3.1.4 for guidance.
µ
s
5
D
Flash Burst Programming consecutive word
t
bwpgm
20.4
2
—
31
3
µ
s
6
D
Flash Burst Programming Time for 32 Word row
t
brpgm
678.4
2
—
1035.5
3
µ
s
6
D
Flash Burst Programming Time for 64 Word row
t
brpgm
1331.2
2
—
2027.5
3
µ
s
7
P
Sector Erase Time
t
era
20
(4)
4. Minimum Erase times are achieved under maximum NVM operating frequency f
NVMOP
.
—
26.7
3
ms
8
P
Mass Erase Time
t
mass
100
4
—
133
3
ms
9
D
Blank Check Time Flash per block
t
check
11
(5)
5. Minimum time, if first word in the array is not blank (512 byte sector size).
—
32778
(6)
6. Maximum time to complete check on an erased block (512 byte sector size)
(7)
t
cyc
7. Where t
cyc
is the system bus clock period.
9
D
Blank Check Time Flash per block
t
check
11
(8)
8. Minimum time, if first word in the array is not blank (1024 byte sector size)
—
65546
(9)
9. Maximum time to complete check on an erased block (1024 byte sector size).
t
cyc
Summary of Contents for MC9S12C Family
Page 689: ......