Appendix G NVM Electrical Parameters
S12ZVHY/S12ZVHL Family Reference Manual Rev. 1.05
Freescale Semiconductor
803
Appendix G
NVM Electrical Parameters
G.1
NVM Timing Parameters
The time base for all NVM program or erase operations is derived from the bus clock using the FCLKDIV
register. The frequency of this derived clock must be set within the limits specified as f
NVMOP
. The NVM
module does not have any means to monitor the frequency and will not prevent program or erase operation
at frequencies above or below the specified minimum. When attempting to program or erase the NVM
module at a lower frequency, a full program or erase transition is not assured.
The device bus frequency, below which the flash wait states can be disabled, fWSTAT, is specified in the
device operating conditions table in appendix A.
The following sections provide equations which can be used to determine the time required to execute
specific flash commands. All timing parameters are a function of the bus clock frequency, f
NVMBUS
. All
program and erase times are also a function of the NVM operating frequency, f
NVMOP
. A summary of key
timing parameters can be found in
.
Table G-1. NVM Timing Characteristics (32 MHz - 64KB PFlash - 2KB EEPROM)
Num
Command
f
NVMOP
cycle
f
NVMBUS
cycle
Symbol
Min
(1)
Typ
(2)
Max
(3)
Worst
(4)
Unit
1
Erase Verify All Blocks
4,5
0
34528
t
RD1ALL
1.08
1.08
2.16
69.06
ms
2
Erase Verify Block (Pflash)
(5)
0
33320
t
RD1BLK_P
1.04
1.04
2.08
66.64
ms
3
Erase Verify Block
(EEPROM)
(6)
0
1591
t
RD1BLK_D
0.05
0.05
0.10
3.18
ms
4
Erase Verify P-Flash Section
0
505
t
RD1SEC
0.02
0.02
0.06
2.02
ms
5
Read Once
0
481
t
RDONCE
15.03
15.03
15.03
481.00
us
6
Program P-Flash (4 Word)
164
3077
t
PGM_4
0.25
0.26
0.55
12.51
ms
7
Program Once
164
3054
t
PGMONCE
0.25
0.26
0.26
3.26
ms
8
Erase All Blocks
4,5
100066
34991
t
ERSALL
96.39
101.16
102.25
195.06
ms
9
Erase Flash Block (Pflash)
4
100060
33681
t
ERSBLK_P
96.35
101.11
102.17
192.44
ms
10
Erase Flash Block (EEPROM)
5
100060
1922
t
ERSBLK_D
95.36
100.12
100.18
128.92
ms
11
Erase P-Flash Sector
20015
914
t
ERSPG
19.09
20.04
20.07
26.85
ms
12
Unsecure Flash
100066
35056
t
UNSECU
96.40
101.16
102.26
195.19
ms
13
Verify Backdoor Access Key
0
493
t
VFYKEY
15.41
15.41
15.41
493.00
us
14
Set User Margin Level
0
427
t
MLOADU
13.34
13.34
13.34
427.00
us
15
Set Factory Margin Level
0
436
t
MLOADF
13.63
13.63
13.63
436.00
us
16
Erase Verify EEPROM Section
0
583
t
DRD1SEC
0.02
0.02
0.07
2.33
ms
17
Program EEPROM (1 Word)
68
1657
t
DPGM_1
0.12
0.12
0.28
6.71
ms
18
Program EEPROM (2 Word)
136
2660
t
DPGM_2
0.21
0.22
0.47
10.81
ms
