Appendix M LINPHY Electrical Specifications
S12ZVHY/S12ZVHL Family Reference Manual Rev. 1.05
824
Freescale Semiconductor
M.3
Dynamic Electrical Characteristics
Table M-3. Dynamic electrical characteristics of the LINPHY
12b
D
Capacitance of the LIN pin,
Recessive state
C
LIN
45
pF
13
M
Internal pull-up (slave)
R
slave
27
34
40
k
1. For 3.5V<= V
LINSUP
<7V, the LINPHY is still working but with degraded parametrics.
2. The V
LINSUP
voltage is provided by the VLINSUP supply. This supply mapping is described in device level documentation.
3. At temperatures above 25C the current may be naturally limited by the driver, in this case the limitation circuit is not en-
gaged and the flag is not set.
Characteristics noted under conditions 7V<= V
LINSUP
<=18V unless otherwise noted
(1)
. Typical values noted reflect the
approximate parameter mean at T
A
= 25°C under nominal conditions unless otherwise noted.
Num
C
Ratings
Symbol
Min
Typ
Max
Unit
1
P
Minimum duration of wake-up pulse generating a
wake-up interrupt
t
WUFR
56
72
120
s
2
P
TxD-dominant timeout
t
DTLIM
16388
16389
t
IRC
3
P
Propagation delay of receiver
t
rx_pd
6
s
4
P
Symmetry of receiver propagation delay rising edge
w.r.t. falling edge
t
rx_sym
-2
2
s
LIN PHYSICAL LAYER: DRIVER CHARACTERISTICS FOR NOMINAL SLEW RATE - 20.0KBIT/S
5
T
Rising/falling edge time (min to max / max to min)
t
rise
6.5
s
6
T
Over-current masking window (IRC trimmed at 1MHz)
t
OCLIM
15
16
s
7
M
Duty cycle 1
T
HRec(max)
= 0.744 x V
LINSUP
T
HDom(max)
= 0.581 x V
LINSUP
V
LINSUP
= 7.0V...18V
t
Bit
= 50us
D1 = t
Bus_rec(min)
/ (2 x t
Bit
)
D1
0.396
8
M
Duty cycle 2
T
HRec(min)
= 0.422 x V
LINSUP
T
HDom(min)
= 0.284 x V
LINSUP
V
LINSUP
= 7.6V...18V
t
Bit
= 50us
D2 = t
Bus_rec(max)
/ (2 x t
Bit
)
D2
0.581
LIN PHYSICAL LAYER: DRIVER CHARACTERISTICS FOR SLOW SLEW RATE - 10.4KBIT/S
9
T
Rising/falling edge time (min to max / max to min)
t
rise
13
s
10
T
Over-current masking window (IRC trimmed at 1MHz)
t
OCLIM
31
32
s
