MSC8144E Reference Manual, Rev. 3
12-26
Freescale
Semiconductor
DDR SDRAM Memory Controller
operation of the DDR interface, since it defines to the I/O cells the selected operating
voltage.
2.
The DDR WINDOW END ADDRESS REGISTER[bit] in the CLASS should be
programmed to point to the last available DDR address. Using this register will prevent
accesses to unavailable memory space beyond the DDR memory space.
Table 12-13. Memory Interface Configuration Register Initialization Parameters
Register
Parameter Bits
Page
Chip-Select Memory Bounds
Register (CSx_BNDS)
Starting Address for Chip Select x (SAx)
Ending Address for Chip Select x (EAx)
Chip-Select Configuration
Register (CSx_CONFIG)
Chip Select x Enable (CS_x_EN)
Chip Select x Auto-Precharge Enable (AP_x_EN)
ODT for Reads (ODT_RD_CFG)
ODT for Writes (ODT_WR_CFG)
Number of Bank Bits (BA_BITS_CS_x)
Number of Row Bits (ROW_BITS_CS_x)
Number of Column Bits (COL_BITS_CS_x)
DDR SDRAM Extended
Refresh Recovery Register
(TIMING_CFG_3)
Extended Refresh Recovery Time (REFR)
Timing Configuration 0
Register (TIMING_CFG_0)
Read-to-Write Turn-Around (RWT)
Write-to-Read Turn-Around (WRT)
Read-to-Read Turn-Around (RRT)
Write-to-Write Turn-Around (WWT)
Active Power-Down Exit Timing (ACT_PD_EXIT)
Precharge Power-Down Exit Timing (PRE_PD_EXIT)
ODT Power-Down Exit Timing (PDT_PD_EXIT)
Mode Register Set Cycle Time (MRS_CYC)
Timing Configuration 1
Register (TIMING_CFG_1)
Precharge-to-Activate Interval (PRETOACT)
Activate-to-Precharge Interval (ACTTOPRE)
Activate to Read/Write Interval for SDRAM (ACTTORW)
MCAS
Latency from Read Command (CASLAT)
Refresh Recovery Time (REFREC)
Last Data to Precharge Minimum Interval (WRREC)
Activate-to-Activate Interval (ACTTOACT)
Last Write Data Pair to Read Interval (WR_DATA_DELAY)
Timing Configuration 2
Register (TIMING_CFG_2)
Additive Latency (ADD_LAT)
MCAS
-to-Preamble Override (CPO)
Write Latency (WR_LAT)
Read-to-Precharge (RD_TO_PRE)
Write Data Delay (WR_DATA_DELAY)
Minimum CKE Pulse Width (CKE_PLS)
Window for Four Activates (FOUR_ACT)
DDR SDRAM Control
Configuration Register
(DDR_SDRAM_CFG)
Self Refresh Enable (SREN)
ECC Enable (ECC_EN)
SDRAM Type (SDRAM_Type)
Dynamic Power Management Mode (DYN_PWR)
32-Bit Bus Enable (32_BE)
Non-Current Auto Precharge (NCAP)
2T Timing Enable (2T_EN)
Half-Strength Drive Enable (HSE)
Bypass Initialization (BI)
Summary of Contents for MSC8144E
Page 1: ...MSC8144E Reference Manual Quad Core Media Signal Processor MSC8144ERM Rev 3 July 2009 ...
Page 48: ...MSC8144E Reference Manual Rev 3 xlviii Freescale Semiconductor ...
Page 86: ...MSC8144E Reference Manual Rev 3 1 38 Freescale Semiconductor Overview ...
Page 168: ...MSC8144E Reference Manual Rev 3 3 60 Freescale Semiconductor External Signals ...
Page 242: ...MSC8144E Reference Manual Rev 3 5 26 Freescale Semiconductor Reset ...
Page 314: ...MSC8144E Reference Manual Rev 3 8 24 Freescale Semiconductor General Configuration Registers ...
Page 414: ...MSC8144E Reference Manual Rev 3 10 14 Freescale Semiconductor MSC8144E SC3400 DSP Subsystem ...
Page 452: ...MSC8144E Reference Manual Rev 3 11 38 Freescale Semiconductor Internal Memory Subsystem ...
Page 520: ...MSC8144E Reference Manual Rev 3 12 68 Freescale Semiconductor DDR SDRAM Memory Controller ...
Page 1070: ...MSC8144E Reference Manual Rev 3 21 28 Freescale Semiconductor Timers ...