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Appendix H Comparison of H8/300H Series
Product Specifications
H.1
Differences between H8/3039F and H8/3022F
Table H-1
Differences between H8/3039F and H8/3022F
H8/3039F
H8/3022F
Operating
range
Operating
power supply
voltage
4.5 V to 5.5 V
3.0 V to 5.5 V
3.0 V to 3.6 V
Operating
frequency
1 MHz to
18 MHz
1 MHz to
10 MHz
2 MHz to 18 MHz
On-chip RAM
4 kbytes
8 kbytes
Flash memory Size
128 kbytes
256 kbytes
Program/erase
voltage
Supplied from V
CC
Supplied from V
CC
Programming
unit
32-byte simultaneous
programming
Write pulse application method
= 150
µ
s
×
4 + 500
µ
s
×
399
128-byte simultaneous
programming
Write pulse application method
= 30
µ
s
×
6 + 200
µ
s
×
994
(with 10
µ
s additional
programming)
Block
configuration
8 blocks
•
1 kbyte
×
4
•
28 kbytes
×
1
•
32 kbytes
×
3
12 blocks
•
4 kbytes
×
8
•
32 kbytes
×
1
•
64 kbytes
×
3
EBR register
configuration
EBR
I/O address: H'FF42
7
EB7
6
EB6
5
EB5
4
EB4
3
EB3
2
EB2
1
EB1
0
EB0
EBR1
I/O address: H'FF42
7
EB7
6
EB6
5
EB5
4
EB4
3
EB3
2
EB2
1
EB1
0
EB0
EBR2
I/O address: H'FF43
7
—
6
—
5
—
4
—
3
EB11
2
EB10
1
EB9
0
EB8
Flash error
FLMSR
I/O address: H'FF4D
7
FLER
6
—
5
—
4
—
3
—
2
—
1
—
0
—
FLMCR2
I/O address: H'FF41
7
FLER
6
—
5
—
4
—
3
—
2
—
1
—
0
—