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Section 8 EEPROM
8.1
Overview
The H8/3150 series has an electrically writable and erasable EEPROM on-chip. Both data and
program code can be stored in the EEPROM.
8.1.1
Features
The features of the EEPROM are listed below.
•
Configuration: Allocated on the CPU address space
Product
EEPROM Capacity
Page Size
Number of Pages
H8/3152
8 256 bytes
32 bytes
256 + 8 pages
H8/3153
16 512 bytes
64 bytes
256 + 8 pages
H8/3155
1 kbyte + 128 bytes
16 bytes
64 + 8 pages
H8/3156
2 kbyte + 128 bytes
16 bytes
128 + 8 pages
H8/3158
16 512 bytes
64 bytes
256 + 8 pages
•
Written by a special block data transfer instruction
EEPMOV instruction: rewrites or overwrites a block of data (1 byte to the maximum number
of bytes in a page), or erases a page (16, 32, or 64 bytes) at a time.
•
Protection features prevent accidental writing and erasing
Write/erase protection can be designated by protect bits.
Control registers prevent inadvertent writing and erasing.
•
On-chip voltage pumping circuit
Generates the high voltage required for writing and erasing
•
Built-in oscillator and timer
The write/erase sequence is controlled using an independent oscillator. EEPROM write/erase
timing does not depend on the external clock.
•
Write/erase time (max.):
10 ms (rewrite), 5 ms (erase, overwrite)
•
Rewrite endurance: 10
5
times
•
Data retention time: 10 years