Rev. 2.10
22
���� 02� 201�
Rev. 2.10
23
���� 02� 201�
HT68F20/HT68F30/HT68F40/HT68F50/HT68F60
HT68FU30/HT68FU40/HT68FU50/HT68FU60
Enhanced I/O Flash Type 8-Bit MCU with EEPROM
HT68F20/HT68F30/HT68F40/HT68F50/HT68F60
HT68FU30/HT68FU40/HT68FU50/HT68FU60
Enhanced I/O Flash Type 8-Bit MCU with EEPROM
Absolute Maximum Ratings
Supply Voltage ..................................................................................................
V
SS
-0.3V~V
SS
+6.0V
Input Voltage
.....................................................................................................
V
SS
-0.3V~V
DD
+0.3V
Storage Temperature ....................................................................................................
-50˚C~125˚C
Operating Temperature .................................................................................................. -
40˚C~85˚C
I
OL
Total .................................................................................................................................... 80mA
I
OH
Total ..................................................................................................................................
-80mA
Total Power Dissipation
.......................................................................................................
500mW
Note: These are stress ratings only. Stresses exceeding the range specified under "Absolute
Maximum Ratings" may cause substantial damage to the device. Functional operation of
this device at other conditions beyond those listed in the specification is not implied and
prolonged exposure to extreme conditions may affect device reliability.
D.C. Characteristics
Ta=25
˚C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Unit
V
DD
Conditions
V
DD
Operating Vo�tage
(HXT� ERC� HIRC)
—
f
SYS
=8MHz
2.2
—
5.5
V
f
SYS
=12MHz
2.7
—
5.5
V
f
SYS
=20MHz
�.5
—
5.5
V
I
DD1
Operating C�rrent� Norma� Mode�
f
SYS
=f
H
(HXT� ERC� HIRC)
3V No �oad� f
SYS
=f
H
=�MHz�
WDT enab�e
—
0.7
1.1
mA
5V
—
1.8
2.7
mA
3V No �oad� f
SYS
=f
H
=8MHz�
WDT enab�e
—
1.6
2.�
mA
5V
—
3.3
5.0
mA
3V No �oad� f
SYS
=f
H
=12MHz�
WDT enab�e
—
2.2
3.3
mA
5V
—
5.0
7.5
mA
I
DD2
Operating C�rrent� Norma� Mode�
f
SYS
=f
H
(HXT)
5V No �oad� f
SYS
=f
H
=20MHz�
WDT enab�e
—
6.0
9.0
mA
I
DD3
Operating C�rrent� S�ow Mode�
f
SYS
=f
L
(LXT� LIRC)
3V
No �oad� f
SYS
=f
L
� WDT enab�e
—
10
20
μA
5V
—
30
50
μA
I
IDLE0
IDLE0 Mode Standb� C�rrent
(LXT or LIRC on)
3V
No �oad� WDT enab�e
—
1.5
3.0
μA
5V
—
3.0
6.0
μA
I
IDLE1
IDLE1 Mode Standb� C�rrent
(HXT� ERC� HIRC)
3V No �oad� WDT enab�e
f
SYS
=12MHz on
—
0.55
0.83
mA
5V
—
1.30
2.00
mA
I
SLEEP0
SLEEP0 Mode Standb� C�rrent
(LXT or LIRC off)
3V
No �oad� WDT disab�e
—
—
1
μA
5V
—
—
2
μA
I
SLEEP1
SLEEP1 Mode Standb� C�rrent
(LXT or LIRC on)
3V
No �oad� WDT enab�e
—
1.5
3.0
μA
5V
—
2.5
5.0
μA
V
IL1
Inp�t Low Vo�tage for I/O Ports or
Inp�t Pins except RES pin
—
—
0
—
0.3V
DD
V
V
IH1
Inp�t High Vo�tage for I/O Ports or
Inp�t Pins except RES pin
—
—
0.7V
DD
—
V
DD
V
V
IL2
Inp�t Low Vo�tage (RES)
—
—
0
—
0.�V
DD
V
V
IH2
Inp�t High Vo�tage (RES)
—
—
0.9V
DD
—
V
DD
V