This Data Sheet may be revised by subsequent versions ©2004 Eon Silicon Solution, Inc., www.eonssi.com
or modifications due to changes in technical specifications.
24
EN25F16
Rev. F, Issue Date: 2009/03/16
Table 9. DC Characteristics
(T
a
= - 40°C to 85°C; V
CC
= 2.7-3.6V)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
I
LI
Input Leakage Current
± 2
µA
I
LO
Output Leakage Current
± 2
µA
I
CC1
Standby Current
CS# = V
CC
, V
IN
= V
SS
or V
CC
5 µA
I
CC2
Deep Power-down Current
CS# = V
CC
, VIN = V
SS
or V
CC
5 µA
CLK = 0.1 V
CC
/ 0.9 V
CC
at
100MHz, DQ = open
25 mA
I
CC3
Operating Current (READ)
CLK = 0.1 V
CC
/ 0.9 V
CC
at
75MHz, DQ = open
20 mA
I
CC4
Operating Current (PP)
CS# = V
CC
28 mA
I
CC5
Operating Current (WRSR)
CS# = V
CC
18 mA
I
CC6
Operating Current (SE)
CS# = V
CC
25 mA
I
CC7
Operating Current (BE)
CS# = V
CC
25 mA
V
IL
Input Low Voltage
– 0.5
0.2 V
CC
V
V
IH
Input High Voltage
0.7V
CC
V
CC
+0.4
V
V
OL
Output Low Voltage
I
OL
= 1.6 mA
0.4 V
V
OH
Output High Voltage
I
OH
= –100 µA
V
CC
-0.2
V
Table 10. AC Measurement Conditions
Symbol
Parameter
Min.
Max.
Unit
C
L
Load Capacitance
20/30
pF
Input Rise and Fall Times
5 ns
Input Pulse Voltages
0.2
V
CC
to 0.8
V
CC
V
Input Timing Reference Voltages
0.3
V
CC
to 0.7
V
CC
V
Output Timing Reference Voltages
V
CC
/ 2
V
Notes:
1. C
L
= 20 pF when CLK=100MHz, C
L
= 30 pF when CLK=75MHz,
Figure 22. AC Measurement I/O Waveform
