16. Packaging > Thermal Characteristics
242
PEB383 User Manual
July 25, 2011
Integrated Device Technology, Inc.
Confidential - NDA Required
16.2
Thermal Characteristics
Heat generated by the packaged silicon must be removed from the package to ensure the silicon is
maintained within its functional and maximum design temperature limits. If heat buildup becomes
excessive, the silicon temperature may exceed the temperature limits. A consequence of this is that the
silicon may fail to meet the performance specifications and the reliability objectives may be affected.
Failure mechanisms and failure rate of a device has an exponential dependence on the silicon operating
temperatures. Therefore, the control of the package, and by extension the Junction temperature, is
essential to ensure product reliability. The PEB383 is specified safe for operation when the Junction
temperature is within the recommended limits as shown in
Table 52: Thermal Specifications — 66MHz
Power estimates are based on simulations — 0.894 W @ 66MHz
Package
Parameter
Air Flow
Unit
0 m/s
1 m/s
2 m/s
QFP — EM128
θ
JA
43.9
36.9
33.7
C/W
T
j
Max @ T
AMB
=85°C
124
118
115
C
T
j
Max @ T
AMB
=70°C
109
103
100
C
θ
JC
14
—
—
C/W
QFN — NQ132
θ
JA
23.4
18.5
17
C/W
T
j
Max @ T
AMB
=85°C
106
102
100
C
T
j
Max @ T
AMB
=70°C
91
87
85
C
θ
JC
11.5
C/W
θ
JB
0.42
C/W