Data Sheet
87
Rev. 1.00
2017-07-31
TLE9262BQXV33
LIN Transceiver
LIN Bus Transmitter (LIN Pin)
Bus Serial Diode Voltage
Drop
V
serdiode
0.4
0.7
1.0
V
1)
V
TXD
= VCC1;
LIN 2.2 Param 21
P_11.3.15
Bus Recessive Output
Voltage
V
BUS,ro
0.8 ×
V
SHS
–
V
SHS
V
V
TXD
= HIGH Level
P_11.3.16
Bus Short Circuit Current
I
BUS,sc
40
100
150
mA
V
BUS
= 18 V;
LIN 2.2 Param 12
P_11.3.17
Leakage Current
Loss of Ground
I
BUS,lk1
-1000 -450
20
µA
V
SHS
= 12 V = GND;
0 V <
V
BUS
< 18 V;
LIN 2.2 Param 15
P_11.3.18
Leakage Current
Loss of Battery
I
BUS,lk2
–
–
20
µA
V
SHS
= 0 V;
V
BUS
= 18 V;
LIN 2.2 Param 16
P_11.3.19
Leakage Current
Driver Off
I
BUS,lk3
-1
–
–
mA
V
SHS
= 18 V;
V
BUS
= 0 V;
LIN 2.2 Param 13
P_11.3.20
Leakage Current
Driver Off
I
BUS,lk4
–
–
20
µA
V
SHS
= 8 V;
V
BUS
= 18 V;
LIN 2.2 Param 14
P_11.3.21
Bus Pull-up Resistance
R
BUS
20
30
47
k
Ω
Normal Mode
LIN 2.2 Param 26
P_11.3.22
LIN Input Capacitance
C
BUS
20
25
pF
1)
P_11.3.23
Receiver propagation delay
bus dominant to RXD LOW
t
d(L),R
–
1
6
µs
V
CC
= 3.3 V;
C
RXD
= 20 pF;
LIN 2.2 Param 31
P_11.3.24
Receiver propagation delay
bus recessive to RXD HIGH
t
d(H),R
–
1
6
µs
V
CC
= 3.3 V;
C
RXD
= 20 pF;
LIN 2.2 Param 31
P_11.3.25
Receiver delay symmetry
t
sym,R
-2
–
2
µs
t
sym,R
=
t
d(L),R
-
t
d(H),R
;
LIN 2.2 Param 32
P_11.3.26
LIN Transceiver Enabling
Time
t
LIN,EN
8
13
18
µs
2)
CSN = HIGH to first valid
transmitted TXD dominant
P_11.3.27
Bus Dominant Time Out
t
BUS_LIN
_TO
16
20
24
ms
1)2)
P_11.3.28
TXD Dominant Time Out
t
TxD_LIN
_TO
16
20
24
ms
1)2)
V
TXD
= 0 V
P_11.3.29
TXD Dominant Time Out
Recovery Time
t
torec
5
10
14
µs
1)2)
P_11.3.30
Table 19 Electrical Characteristics
(cont’d)
V
SHS
= 5.5 V to 18 V,
T
j
= -40 °C to +150 °C, RL = 500
Ω
, all voltages with respect to ground, positive current
flowing into pin (unless otherwise specified)
Parameter
Symbol
Values
Unit Note or Test Condition
Number
Min.
Typ. Max.
