Signal Description
78
Datasheet, Volume 1
6.1
System Memory Interface
Table 6-2.
Memory Channel A
Signal Name
Description
Direction/
Buffer Type
SA_BS[2:0]
Bank Select:
These signals define which banks are selected within
each SDRAM rank.
O
DDR3
SA_WE#
Write Enable Control Signal:
This signal is used with SA_RAS# and
SA_CAS# (along with SA_CS#) to define the SDRAM Commands.
O
DDR3
SA_RAS#
RAS Control Signal:
This signal is used with SA_CAS# and SA_WE#
(along with SA_CS#) to define the SRAM Commands.
O
DDR3
SA_CAS#
CAS Control Signal:
This signal is used with SA_RAS# and SA_WE#
(along with SA_CS#) to define the SRAM Commands.
O
DDR3
SA_DQS[7:0]
SA_DQS#[7:0]
Data Strobes:
SA_DQS[7:0] and its complement signal group make
up a differential strobe pair. The data is captured at the crossing point
of SA_DQS[7:0] and its SA_DQS#[7:0] during read and write
transactions.
I/O
DDR3
SA_DQ[63:0]
Data Bus:
Channel A data signal interface to the SDRAM data bus.
I/O
DDR3
SA_MA[15:0]
Memory Address:
These signals are used to provide the multiplexed
row and column address to the SDRAM.
O
DDR3
SA_CK[1:0]
SDRAM Differential Clock:
Channel A SDRAM Differential clock signal
pair. The crossing of the positive edge of SA_CK and the negative edge
of its complement SA_CK# are used to sample the command and
control signals on the SDRAM.
O
DDR3
SA_CK#[1:0]
SDRAM Inverted Differential Clock:
Channel A SDRAM Differential
clock signal-pair complement.
O
DDR3
SA_CKE[1:0]
Clock Enable:
(1 per rank). These signals are used to:
• Initialize the SDRAMs during power-up
• Power-down SDRAM ranks
• Place all SDRAM ranks into and out of self-refresh during STR
O
DDR3
SA_CS#[1:0]
Chip Select:
(1 per rank). These signals are used to select particular
SDRAM components during the active state. There is one Chip Select
for each SDRAM rank.
O
DDR3
SA_ODT[1:0]
On Die Termination:
Active Termination Control.
O
DDR3