Appendix D: Using a Model 82 C-V System
Model 4200A-SCS Parameter Analyzer Reference Manual
D-62
4200A-901-01 Rev. C / February 2017
Constants, symbols, and equations used for analysis
In order to perform correct analysis, it may be necessary for you to verify or modify the analysis
constants to suit your particular device. Before making measurements, it is strongly recommended
that you verify that constants are correct to ensure that your analysis is performed correctly.
Default material constants
The following table lists default material constants, values, descriptions, and symbols.
Default material constants
Symbol
Description
Default value
q
Electron charge (coulombs)
1.60218e-019 coulombs
k
Boltzmann’s constant (J/°K)
1.38065e-023 J/°K
T
Test temperature (°K)
297.13 °K
ε
OX
Permittivity of oxide (F/cm)
3.4e-013 F/cm
ε
S
Semiconductor permittivity (F/cm)
1.04e-012 F/cm
EG
Semiconductor energy gap (eV)
1.12 eV
n
I
Intrinsic carrier concentration (I/cm
3
)
1.45e010 cm
-3
W
MS
Metal work function (V)
4.1 V
W
M
Electron affinity (V)
4.15 V
Data symbols
The following table summarizes data symbols in the library, including a description of each symbol.
Data symbols
Symbol
Description
Units
A
Device gate area.
cm
2
C
FB
Flatband capacitance, corresponding to no band bending.
pF
C
H
High-frequency capacitance, as measured by the Model 590 at either 100 kHz
or 1 MHz.
pF
C
HADJ
The high-frequency capacitance that is adjusted according to gain and offset
values. C
HADJ
is the value that is actually plotted and printed.
pF
C
Q
Quasistatic capacitance as measured by Model 590.
pF
C
QADJ
The quasistatic capacitance that is adjusted according to gain and offset
values. C
QADJ
is the value that is actually plotted and printed.
pF
C
Q
'
Interpolated value of C
Q
set to correspond to the quasistatic capacitance at V.
pF
C
MIN
Minimum high-frequency capacitance in inversion.
pF
C
OX
Oxide capacitance, usually set to the maximum C
H
in accumulation.
pF
D
rr
Density or concentration of interface states.
1/cm
2
/eV
E
C
Energy of conduction band edge (valence band is E
V
).
eV
E
T
Interface trap energy.
eV
G
High-frequency conductance, as measured by the Model 590 at either 100 kHz
or 1 MHz.
S
N
A
Bulk doping for p-type (acceptors).
1 / cm
3
N
D
Bulk doping for n-type (donors).
1 / cm
3
N
AVG
Average doping concentration.
1 / cm
3
N
BULK
Bulk doping concentration.
1 / cm
3
