Model 4200A-SCS Parameter Analyzer Reference Manual
Section 4: Multi-frequency capacitance-voltage unit
4200A-901-01 Rev. C / February 2017
4-67
c-v test
This test generates a C-V sweep on a MOS capacitor and derives C
ox
, C
min
, and N
avg
. These
parameters are input into the MOS Capacitor Zerbst C-t Sweep (C-t) test and the MOS Capacitor
Generation Rate versus Depletion Depth (GNI_W-WF) test using the Formulator.
c-v Analyze sheet
Test data is displayed in the Analyze sheet:
•
Cp_GB: Measured parallel capacitance.
•
Gp_GB: Measured conductance.
•
DCV_GB: Forced DC bias voltage.
•
F_GB: Forced test frequency.
•
Formulas: Formulator calculation results.
GB = gate-to-bulk.
c-t test
This test drives a MOS capacitor into accumulation by applying a negative hold voltage for a period
(hold time). The bias voltage is then reversed to drive the capacitor into depletion. While in depletion,
a series of capacitance measurements are made at a set time interval. The capacitance versus time
measurements are plotted on a graph.
When configuring the test, you need to set the DC bias hold voltage (for accumulation) and the DC
bias voltage level (for depletion). You also set the hold time for the bias hold voltage (in
accumulation).
c-t Analyze sheet
The test data is displayed in the Analyze sheet:
•
Time: Timestamp for each measurement.
•
Cp_GB: Measured parallel capacitance.
•
Gp_GB: Measured conductance.
•
DCV_GB: Forced DC bias voltage.
•
F_GB: Forced test frequency.
•
CVU1S: Status code for each measurement. Rows highlighted in blue indicate a fault. For details,
see
(on page 6-191).
•
Formulas: Formulator calculation results.
GB = Gate-to-bulk.
