Section 4: Multi-frequency capacitance-voltage unit
Model 4200A-SCS Parameter Analyzer Reference Manual
4-96
4200A-901-01 Rev. C / February 2017
Formula: ISC
Formula name: ISC (
I
SC
)
Units: A
Description: Short circuit current. ISC is the point in I-V data where V = 0.
Formulator entry:
ISC = ABS(AT(ANODEI, FINDD(ANODEV, 0, FIRSTPOS(ANODEV))))
Formula: N
Formula name: N (
N(
a
)
)
Units: 1/cm
3
Description: Doping density.
Formulator entry:
N = ABS(2/Q/ES/AREA^2/DIFF(INV_C2, DCV_AC))
Simplified equation:
Where:
•
N
(a)
= doping density
•
q = electron charge (C)
•
E
s
= semiconductor permittivity for silicon (F/cm)
•
A = area (cm
2
)
•
C = measured capacitance (F)
•
V = applied voltage (V)
Formula: P
Formula name: P
Units: W
Description: Power.
Formulator entry:
P = CURR*ANODEV
Simplified equation:
P = I x V
Where:
•
I = Cell current
•
V = Cell voltage
