S530 Parametric Test System Test Subroutine Library User's Manual
Section 3: Test subroutine library reference
S530-907-01 Rev. A / September 2015
3-13
bvceo
This subroutine measures the collector-emitter breakdown voltage (V
CE
) when the collector current (I
C
) is forced
with the base terminal left open.
Usage
double bvceo(int
e
, int
b
, int
c
, int
sub
, double
ipgm
, double
vlim
, char
type
);
e
Input
The emitter pin of the device
b
Input
The base pin of the device
c
Input
The collector pin of the device
sub
Input
The substrate pin of the device
ipgm
Input
The forced collector-emitter current (I
CE
), in amperes
vlim
Input
The collector voltage limit, in volts
type
Input
Type of transistor:
"N"
or
"P"
Returns
Output
Collector-emitter voltage:
-1.0
= TYPE not "N" or "P"
+2.0E + 21
= Voltage limit reached; measured voltage is within
98 % of the specified voltage limit (
vlim
)
Details
If a positive substrate pin is specified, the substrate is grounded. If a positive substrate pin is not
specified, the substrate is left floating.
A delay is incorporated into the
bvceo
subroutine; this delay is the calculated time required for stable
forcing of
ipgm
within the
vlim
voltage limit.
V/I polarities
The polarity of
ipgm
is determined by the device type.
Source-measure units (SMUs)
SMU1: Forces I
CEO
, programmed voltage limit, measures
bvceo
Example
result = bvceo(e, b, c, sub, ipgm, vlim, type);
Schematic
