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LGE Internal Use Only
Copyright ©
LG Electronics. Inc. All rights reserved.
Only for training and service purposes
5.5. EEPROM Data Write
5.5.1 Siganl TABLE
LEN : 84h+Bytes
CMD : E8h
ADH : E2PROM Slave Address(A0,A2,A4,A6,A8,AA,AC,AE),
Not 00h(Reserved by Buffer To EEPROM)
ADL : E2PROM Sub Address(00~FF)
Data : Write data
Delay : 20ms
5.5.2. Command Set
* Use
■
FOS Default write :
<14mode data> write
SyncFlags,HPeriodH, HPeriodL, VtotalH,VtotalL,
SrcHTotalH, SrcHTotalL
SrcHStartH, SrcHStartL, SrcVStartH,SrcVStartL,
HsyncPhase
■
Temporary Data write: Write to particular address of
EEPROM.
5.6. E
2
PROM Data Read
5.6.1. Signal TABLE
5.6.2. COMMAND SET
5.6.3. Use
Read E2PROM’s specific area as unit of 128(80h)-byte. (84h)
5.6.4 EDID Write
EEPROM access by using DDC2B protocol
■
1-Byte write
L : 0x00~0x7F
D : data
■
8-byte write
L : 0x00,0x10,….0x70
5.6.5. EDID Read
- DDC2B Command.(A0/A1)
- 128 Byte transfer of EDID Buffer of MICOM
No.
Adjustment
contents
CMD(hex)
LEN
Explanation
1
E E P R O M
WRITE
E8
94
16-Byte Write
2
(84+n)
n-byte Write
No. Adjustment
contents
CMD
(hex)
ADH
(hex)
ADL
(hex)
Explanation
1
EEPROM
READ
E7
A0
0
0-Page 0~7F Read
2
80
0-Page 80~FF Read
3
A2
0
1-Page 0~7F Read
4
80
1-Page 80~FF Read
5
A4
0
2-Page 0~7F Read
6
80
2-Page 80~FF Read
7
A6
0
3-Page 0~7F Read
8
80
3-Page 80~FF Read
9
A8
0
4-Page 0~7F Read
10
80
4-Page 80~FF Read
11
AA
0
5-Page 0~7F Read
12
80
5-Page 80~FF Read
13
AC
0
6-Page 0~7F Read
14
80
6-Page 80~FF Read
15
AE
0
7-Page 0~7F Read
16
80
7-Page 80~FF Read
Summary of Contents for 31mu97
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