- 2 -
LGE Internal Use Only
Copyright © 2010 LG Electronics. Inc. All right reserved.
Only for training and service purposes
3. TECHNICAL BRIEF
ʹΠΡΪΣΚΘΙΥ͑ι ͣͨ͑͡͡ͽ͑ͶΝΖΔΥΣΠΟΚΔΤ͑͟ͺΟΔ͑͑͟ͲΝΝ͑ΣΚΘΙΥ͑ΣΖΤΖΣΧΖΕ͑͟
ΟΝΪ͑ΗΠΣ͑ΥΣΒΚΟΚΟΘ͑ΒΟΕ͑ΤΖΣΧΚΔΖ͑ΡΦΣΡΠΤΖΤ
ͽͶ͑ͺΟΥΖΣΟΒΝ͑ΆΤΖ͑ΟΝΪ
ZYVX[W
3.6 MEMORY(PF38F4050M0Y3DE, U101 )
The Numonyx™ StrataFlash® Cellular Memory (M18) device provides high read and write performance at
low voltage on a 16-bit data bus.
The flash memory device has a multi-partition architecture with read-while-program and read-while-erase
capability.
The device supports synchronous burst reads up to 108 MHz using ADV# and CLK address-latching
(legacy-latching) on some litho/density combinations and up to 133 MHz using CLK address-latching only
on some litho/density combinations. It is listed below in the following table
Figure. 3.6.1 MEMORY BLOCK DIAGRAM
3. TECHNICAL BRIEF
3.6.1 Functional Description