Chapter 3 AWARD BIOS USER’S GUIDE
Note:
B stands for BEDO (Burst Extended Data Output) DRAM.
E stands for EDO (Extended Data Output) DRAM
F stands for FP (Fast Page) DRAM
Example: If the user chooses DRAM Read Burst (B/E/F): x2/3/4 it
signifies that:
2 is used for setting BEDO
3 is used for setting EDO
4 is used for setting FP
Slower rates may be required to support slower memory.
DRAM Write Burst
(B/E/F):(x3/3/4)/(x3/3/3)/(x2/2/3)/(x4/4/4)
This option chooses the Write Burst Timing for accessing
DRAM. See: DRAM Read Burst Option
DRAM Refresh Queue:
If Enabled is chosen the system’s chipset’s internal 4-deep
refresh queue is enabled with the 4th request being the priority
request and all refresh requests are queued. If disabled is
selected the refresh queue is disabled and all refreshs are priority
requests.
DRAM RAS Only Refresh
This setting provides the RAS only refresh or CAS before RAS
(CBR) refresh. Disabled (default) will utilize the CBR mode
and the system will have better performance.
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