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Chapter 10
16-bit Inverter Timer/Counter R
User’s Manual U16580EE3V1UD00
(g) A/D conversion trigger output settings
To set A/D conversion trigger 0 (TRnADTRG0 signal), set TRnOPT2 register bits TRnAT05 to
TRnAT00.
With bits TRnAT05 to TRnAT00, peak interrupt (INTTRnCD) and valley interrupt (INTTRnOD) ena-
ble/disable is performed at the TRnCCR5 register match timing (counter up count/down count),
and the TRnCCR4 register match timing (counter up count/down count).
To set A/D conversion trigger 1 (TRnADTRG1 signal), set TRnOPT3 register bits TRnAT15 to
TRnAT10.
With bits TRnAT15 to TRnAT10, peak interrupt (INTTRnCD) and valley interrupt (INTTRnOD) ena-
ble/disable is performed at the TRnCCR5 register match timing (counter up count/down count),
and TRnCCR4 register match timing (counter up count/down count). Set the TRnCCR4 and
TRnCCR5 registers’ compare values.
For the TRnADTRG0 and TRnADTRG1 signals, also perform the thinning out function setting.
Caution:
To use the TORn7 pin, correctly perform the TRnOPT2 and TRnOPT3 register and the
TRnCCR4 and TRnCCR5 register settings.
(h) Dead time settings
The dead time settings are performed with the TRnDTC0 and TRnDTC1 registers.
The dead time can be obtained with counter operation clock cycle (P)
×
TRnDTC0, TRnDTC1.
The time until TORn2,TORn4,TORn6 pin inactive change
→
TORn1,TORn3,TORn5 pin active
change can be set with the TRnDTC0 register.
The time until TORn1,TORn3,TORn5 pin inactive change
→
TORn2,TORn4,TORn6 pin active
change can be set with the TRnDTC1 register.
(i) Carrier wave cycle
For the carrier wave cycle, set the TRnCCR0 register using the following equation.
TRnCCR0 = (carrier wave cycle/ counter operation clock cycle) + T TRnDTC0
For the setting value of the TRnCCR0 register, meet the following conditions keeping in mind the
dead time.
TRnCCR0 > 3
×
MAX (TRnDTC0, TRnDTC1) + MIN (TRnDTC0, TRnDTC1)
TRnCCR0
≤
FFFEH
(MAX(A,B) indicates the larger value of A and B, and MIN(A,B) indicates the smaller value of A
and B.)
(j) Duty (PWM width) setting
For the duty setting, perform the U phase, V phase, and W phase settings with the TRnCCR1 to
TRnCCR3 registers. The setting range of the TRnCCR1 to TRnCCR3 registers is 0000H
≤
TRnCCR1, TRnCCR2, TRnCCR3
≤
T 1. Do not set T 2 < TRnCCR1,
TRnCCR2, TRnCCR3.
LSB (Least Significant Bit) of the TRnCCR1 to TRnCCR3 registers means the additional pulse
setting. For example, if TRnCCR1 = 0003H is set, compare to when TRnCCR1 = 0002H is set, the
inverted phase (pin TORn2) change is an 1-count clock delay (during counter up count).
Summary of Contents for V850E/PH2
Page 6: ...6 Preface User s Manual U16580EE3V1UD00...
Page 16: ...16 User s Manual U16580EE3V1UD00...
Page 28: ...28 User s Manual U16580EE3V1UD00...
Page 32: ...32 User s Manual U16580EE3V1UD00...
Page 84: ...84 Chapter 2 Pin Functions User s Manual U16580EE3V1UD00 MEMO...
Page 144: ...144 Chapter 3 CPU Functions User s Manual U16580EE3V1UD00 MEMO...
Page 192: ...192 Chapter 5 Memory Access Control Function PD70F3187 only User s Manual U16580EE3V1UD00 MEMO...
Page 312: ...312 Chapter 9 16 Bit Timer Event Counter P User s Manual U16580EE3V1UD00 MEMO...
Page 534: ...534 Chapter 11 16 bit Timer Event Counter T User s Manual U16580EE3V1UD00...
Page 969: ...969 Chapter 20 Port Functions User s Manual U16580EE3V1UD00 MEMO...
Page 970: ...970 Chapter 20 Port Functions User s Manual U16580EE3V1UD00...
Page 976: ...976 Chapter 22 Internal RAM Parity Check Function User s Manual U16580EE3V1UD00 MEMO...
Page 984: ...984 Chapter 23 On Chip Debug Function OCD User s Manual U16580EE3V1UD00 MEMO...
Page 1006: ...1006 Chapter 24 Flash Memory User s Manual U16580EE3V1UD00 MEMO...
Page 1036: ...1036 Chapter 27 Recommended Soldering Conditions User s Manual U16580EE3V1UD00 MEMO...
Page 1046: ...1046 Appendix A Index User s Manual U16580EE3V1UD00 MEMO...
Page 1052: ...1052 User s Manual U16580EE3V1UD00...
Page 1053: ......