2001 Nov 02
3
NXP Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler
amplifier
BGD712
CHARACTERISTICS
Bandwidth 40 to 750 MHz; V
B
= 24 V; T
mb
= 35
C; Z
S
= Z
L
= 75
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
G
p
power gain
f = 45 MHz
18.2
18.5
18.8
dB
f = 750 MHz
19
19.5
20
dB
SL
slope straight line
f = 45 to 750 MHz; note 1
0.5
1
1.5
dB
FL
flatness straight line
f = 45 to 100 MHz
0.35
dB
f = 100 to 700 MHz
0.5
dB
f = 700 to 750 MHz
0.15
dB
S
11
input return losses
f = 45 to 80 MHz
23
dB
f = 80 to 160 MHz
23
dB
f = 160 to 320 MHz
21
dB
f = 320 to 550 MHz
20
dB
f = 550 to 650 MHz
20
dB
f = 650 to 750 MHz
19
dB
f = 750 to 790 MHz
17
dB
S
22
output return losses
f = 45 to 80 MHz
23
dB
f = 80 to 160 MHz
23
dB
f = 160 to 320 MHz
20
dB
f = 320 to 550 MHz
20
dB
f = 550 to 650 MHz
19
dB
f = 650 to 750 MHz
19
dB
f = 750 to 790 MHz
17
dB
S
21
phase response
f = 50 MHz
45
+45
deg
CTB
composite triple beat
112 channels flat; V
o
= 44 dBmV;
f
m
= 745.25 MHz
62
dB
79 channels flat; V
o
= 44 dBmV;
f
m
= 547.25 MHz
68
dB
79 channels; f
m
= 445.25 MHz;
V
o
= 49.3 dBmV at 547 MHz; note 2
63
dB
X
mod
cross modulation
112 channels flat; V
o
= 44 dBmV;
f
m
= 55.25 MHz
63
dB
79 channels flat; V
o
= 44 dBmV;
f
m
= 55.25 MHz
69
dB
79 channels; f
m
= 745.25 MHz;
V
o
= 49.3 dBmV at 547 MHz; note 2
60
dB
