2001 Nov 02
6
NXP Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler
amplifier
BGD712
PACKAGE OUTLINE
UNIT
A2
max.
c
e
e1
q
Q
max.
q1
q2
U2
U1
W
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
mm
20.8
9.5
0.51
0.38
0.25 27.2
2.04
2.54
13.75 2.54 5.08 12.7 8.8
4.15
3.85
2.4
38.1 25.4 10.2 4.2
44.75
44.25
8.2
7.8
0.25
0.1
3.8
b
F
p
6-32
UNC
y
w
0.7
x
S
DIMENSIONS (mm are the original dimensions)
SOT115J
0
5
10 mm
scale
A
max.
D
max.
L
min.
E
max.
Z
max.
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
D
U1
q
q2
q1
b
F
S
A
Z
p
E
A2
L
c
d
Q
U2
M
w
7
8
9
2
3
W
e
e1
5
p
1
d
x
M
B
y
M
B
B
04-02-04
10-06-18
y
M
B
