Figure 1. S12ZVMx12EVB block diagram
The board is supplied by VBAT voltage in the range from 3.5 V to 26 V. The board includes a reverse battery protection FET
to the output Field Effect Transistor (FET) power bridge, as well as a reverse battery protection diode to the logic supply. A
boost converter can be enabled by using the integrated boost controller and external inductor and diode components, for low
voltage operation (VBAT < 7 V).
The S12ZVM microcontroller integrates the necessary regulation stages, so that VBAT is supplied directly to the
microcontroller device. The VDDX regulator integrated into the S12ZVM provides 5 V to the I/O stages of the
microcontroller.
The S12ZVM can supply 5 V to an external Hall sensor via the EVDD pin. Another integrated voltage regulator provides the
necessary voltages to drive the power MOSFETs.
The MCU also integrates a Gate Driver Unit to drive the power MOSFETs directly from the MCU pins, using external
bootstrap capacitors on the high side FETs. The GDU module includes a Charge Pump to enable 100% duty cycle driving on
the high side FETs. The GDU outputs are internally controlled by the Pulse Width Modulator with Fault Protection module
(PMF) inside the MCU. The PMF module can drive the different channels independently or in complementary pairs, with
automatic dead time insertion.Several FAULT monitoring comparators are connected to the PMF’s external FAULT pin. The
settings for FAULT triggering can be configured using on-board potentiometers.
Introduction
S12ZVM12EVB Evaluation Board User Guide, Rev. 2, 03/2016
Freescale Semiconductor, Inc.
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