2SC3130
2
SJC00125BED
V
CE(sat)
I
C
h
FE
I
C
f
T
I
E
P
C
T
a
I
C
V
CE
I
C
V
BE
C
ob
V
CB
0
160
40
120
80
0
200
160
120
80
40
Collector power dissipation P
C
(mW
)
Ambient temperature T
a
(
°
C)
0
12
10
8
2
6
4
0
80
60
20
40
T
a
=
25
°
C
400
µ
A
300
µ
A
200
µ
A
100
µ
A
I
B
=
500
µ
A
Collector current I
C
(mA
)
Collector-emitter voltage V
CE
(V)
0
2.0
1.6
0.4
1.2
0.8
0
60
50
40
30
20
10
V
CE
=
4 V
T
a
=
75
°
C
−
25
°
C
25
°
C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA
)
0.1
1
10
100
0.01
0.1
1
10
100
I
C
/ I
B
=
10
T
a
=
75
°
C
25
°
C
−
25
°
C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
0.1
1
10
100
0
360
300
240
180
120
60
V
CE
=
4 V
T
a
=
75
°
C
25
°
C
−
25
°
C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
−
0.1
−
1
−
10
−
100
0
4
3
1
2
V
CB
=
4 V
T
a
=
25
°
C
Transition frequency f
T
(GHz
)
Emitter current I
E
(mA)
1
10
100
0
1.6
1.2
0.4
0.8
I
E
=
0
f
=
1 MHz
T
a
=
25
°
C
Collector-base voltage V
CB
(V)
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
This product complies with the RoHS Directive (EU 2002/95/EC).