background image

2SC3130

2

SJC00125BED

V

CE(sat)

 

 I

C

h

FE

 

 I

C

f

T

 

 I

E

P

C

 

 T

a

I

C

 

 V

CE

I

C

 

 V

BE

C

ob

 

 V

CB

0

160

40

120

80

0

200

160

120

80

40

Collector power dissipation  P

C

  

(mW

)

Ambient temperature  T

a

  (

°

C)

0

12

10

8

2

6

4

0

80

60

20

40

T

a

 

=

 25

°

C

400 

µ

A

300 

µ

A

200 

µ

A

100 

µ

A

I

B

 

=

 500 

µ

A

Collector current  I

C

  

(mA

)

Collector-emitter voltage  V

CE

  (V)

0

2.0

1.6

0.4

1.2

0.8

0

60

50

40

30

20

10

V

CE

 

=

 4 V

T

a

 

=

 75

°

C

25

°

C

25

°

C

Base-emitter voltage  V

BE

  (V)

Collector current  I

C

  

(mA

)

0.1

1

10

100

0.01

0.1

1

10

100

I

C

 / I

B

 

=

 10

T

a

 

=

 75

°

C

25

°

C

25

°

C

Collector-emitter saturation voltage  V

CE(sat)

  

(V

)

Collector current  I

C

  (mA)

0.1

1

10

100

0

360

300

240

180

120

60

V

CE

 

=

 4 V

T

a

 

=

 75

°

C

25

°

C

25

°

C

Forward current transfer ratio  h

FE

Collector current  I

C

  (mA)

 0.1

1

10

100

0

4

3

1

2

V

CB

 

=

 4 V

T

a

 

=

 25

°

C

Transition frequency  f

T

  

(GHz

)

Emitter current  I

E

  (mA)

1

10

100

0

1.6

1.2

0.4

0.8

I

E

 

=

 0

=

 1 MHz

T

a

 

=

 25

°

C

Collector-base voltage  V

CB

  (V)

Collector output capacitance

  (Common base, input open circuited)  

C

ob

  (pF)

This product complies with the RoHS Directive (EU 2002/95/EC).

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