Transistors
Publication date : December
2004
SJC
00327
AED
1
2SC5848
Silicon NPN epitaxial planar type
For general amplification
Complementary to
2
SA
2079
Features
High forward current transfer ratio h
FE
Suitable for high-density mounting and douwsizing of the equipment for
ultraminiature leadless package
Package:
0
.
6
mm
×
1
.
0
mm (hight
0
.
39
mm)
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
60
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Emitter-base voltage (Collector open)
V
EBO
7
V
Collector current
I
C
100
mA
Peak collector current
I
CP
200
mA
Collector power dissipation
P
C
100
mW
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
–
55
to +
125
°
C
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
µ
A, I
E
=
0
60
V
Collector-emitter voltage (Base open)
V
CEO
I
C
=
2
mA, I
B
=
0
50
V
Emitter-base voltage (Collector open)
V
EBO
I
E
=
10
µ
A, I
C
=
0
7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
20
V, I
E
=
0
0
.
1
µ
A
Collector-emitter cut-off current (Base open)
I
CEO
V
CE
=
10
V, I
B
=
0
100
µ
A
Forward current transfer ratio
h
FE
V
CE
=
10
V, I
C
=
2
mA
180
390
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
100
mA, I
B
=
10
mA
0
.
1
0
.
3
V
Transition frequency
f
T
V
CB
=
10
V, I
E
= –
2
mA, f =
200
MHz
100
MHz
Collector output capacitance
(Common base, input open circuited)
C
ob
V
CB
=
10
V, I
E
=
0
, f =
1
MHz
2
.
2
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C
7030
measuring methods for transistors.
Unit: mm
1: Base
2: Emitter
3: Collector
ML3-N2 Package
0.60
±
0.0
5
1.00
±
0.05
2
1
3
0.39
+
0.01
−
0.03
0.25
±
0.05
0.25
±
0.05
0.5
0
±
0.05
0.65
±
0.01
0.15
±
0.0
5
2
1
0.35
±
0.0
1
0.05
±
0.03
0.0
5
±
0.0
3
3
Marking Symbol :
3
E
This product complies with the RoHS Directive (EU 2002/95/EC).
