Schottky Barrier Diodes (SBD)
Publication date: December
2004
SKH
00140
AED
1
MA22D17
Silicon epitaxial planar type
For high frequency rectifi cation
Features
Reverse voltage V
R
Reverse voltage V
Reverse voltage V =
100
V is guaranteed
R
R
High non-repetitive peak forward surge current: I
FSM
=
20
A
FSM
FSM
Absolute Maximum Ratings
T
a
=
25
aa
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
100
V
Repetitive peak reverse voltage
V
RRM
V
V
100
V
Forward current (Average)
*
1
I
F(AV)
300
mA
Non-repetitive peak forward surge current
*
2
I
FSM
20
A
Junction temperature
T
j
TT
125
°
C
Storage temperature
T
stg
TT
–
55
to +
125
°
C
Note) *
1
: Mounted on an alumina PC board
*
2
:
50
Hz sine wave
1
cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
=
25
aa
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
V
V
I
F
=
300
mA
0
.
49
0
.
57
V
Reverse current
I
R
V
R
=
100
V
R
R
70
200
µ
A
Terminal capacitance
C
t
V
R
=
0
V, f =
1
MHz
R
R
100
pF
Reverse recovery time
*
t
rr
tt
I
F
= I
R
=
100
mA, I
R
R
rr
=
10
mA,
rrrr
R
L
R
R =
100
LL
Ω
7
ns
Note)
1
. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C
7031
measuring methods for diodes.
2
. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3
. *: t
rr
measurement circuit
rr
rr
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
t
p
tt
=
2
µ
s
t
r
=
0.35 ns
δ =
0.05
I
F
=
I
R
=
100 mA
R
L
=
100
Ω
10%
Input Pulse
Output Pulse
I
rr
=
10 mA
t
r
t
p
tt
t
rr
V
R
I
F
t
t
A
A
Unit: mm
1: Anode
2: Cathode
Mini2-F1 Package
5°
1.6
±
0.1
1
2
0.80
±
0.05
0.55
±
0.1
0.16
+0.1
–0.06
3.
5
±
0.
1
2.
6
±
0.
1
0.45
±
0.1
5°
0 to 0.1
0 to 0.
3
0 to 0.
1
This product complies with the RoHS Directive (EU 2002/95/EC).
