Schottky Barrier Diodes (SBD)
Publication date: November
2005
SKH
00150
AED
1
MA24D50
Silicon epitaxial planar type
For rectification
Features
Forward current (Average) I
F(AV)
=
3
.
0
A rectification is possible
Low forward voltage V
F
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
40
V
Maximum peak reverse voltage
V
RM
40
V
Forward current (Average)
*
1
I
F(AV)
3
.
0
A
Non-repetitive peak forward surge current
*
2
I
FSM
60
A
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
–
40
to +
150
°
C
Note) *
1
: Mounted on an alumina PC board
*
2
:
50
Hz sine wave
1
cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
=
3
.
0
A
0
.
46
0
.
51
V
Reverse current
I
R
V
R
=
40
V
40
200
µ
A
Terminal capacitance
C
t
V
R
=
10
V, f =
1
MHz
105
pF
Reverse recovery time
*
t
rr
I
F
= I
R
=
100
mA, I
rr
=
10
mA,
R
L
=
100
Ω
33
ns
Note)
1
. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C
7031
measuring methods for diodes.
2
. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3
. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
t
p
=
2
µ
s
t
r
=
0.35 ns
δ =
0.05
I
F
=
I
R
=
100 mA
R
L
=
100
Ω
10%
Input Pulse
Output Pulse
I
rr
=
10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Unit : mm
1 : Anode
2 : Cathode
TMiniP2-F1 Package
2.40
±
0.10
0.15
±
0.05
1
2
1.75
±
0.05
4.70
±
0.10
3.80
±
0.05
0.450
±
0.05
5
°
0 to 0.40
0 to 0.03
0.90MAX
5
°
Marking Symbol:
5
R
This product complies with the RoHS Directive (EU 2002/95/EC).
