Fast Recovery Diodes (FRD)
Publication date: February 2007
SKJ00018AED
1
This product complies with RoHS Directive (EU 2002/95/EC).
MA24F41
Silicon epitaxial planar type
For high speed switching circuits
Features
Super high speed switching characteristic (t
rr
= 15 nsec typ.)
At the same time as lowering the wiring inductance and increasing the peak
surge forward current, the resistance to surge damage at power on has been
increased by adopting clip connection package (TMP).
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage
V
RRM
400
V
Non-repetitive peak reverse surge voltage
V
RSM
400
V
Forward current
*1
I
F
1.0
A
Non-repetitive peak forward surge current
*2
I
FSM
20
A
Junction temperature
T
j
–40 to +150
°
C
Storage temperature
T
stg
–40 to +150
°
C
Note) *1: Mounted on an alumina PC board
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
= 800 mA
1.0
1.3
V
Reverse current
I
RRM
V
RRM
= 400 V
20
m
A
Terminal capacitance
C
t
V
R
= 0 V, f = 1 MHz
30
pF
Reverse recovery time
*
t
rr
I
F
= 0.5 A, I
R
= 1.0 A
I
rr
= 0.25 A
15
45
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz.
3. *: t
rr
measurement circuit
D.U.T
t
rr
0.25
×
I
R
I
F
I
R
50
Ω
5.5
Ω
50
Ω
Unit: mm
1 : Anode
2 : Cathode
TMiniP2-F1 Package
2.40
±
0.10
0.15
±
0.05
1
2
1.75
±
0.05
4.70
±
0.10
3.80
±
0.05
0.450
±
0.05
5
°
0 to 0.40
0 to 0.0
3
0.90MAX
5
°
Marking Symbol: G2
