Schottky Barrier Diodes (SBD)
1
Publication date: January 2004
SKH00128BED
MA27D29
Silicon epitaxial planar type
For super high speed switching
■
Features
•
Low forward voltage: V
F
<
0.42 V (at I
F
=
100 mA)
•
Optimum for high frequency rectification because of its short
reverse recovery time t
rr
.
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
30
V
Repetitive peak reverse voltage
V
RRM
30
V
Forward current (Average)
I
F(AV)
100
mA
Peak forward current
I
FM
200
mA
Non-repetitive peak forward
I
FSM
1
A
surge current
*
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
−
55 to
+
125
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F1
I
F
=
10 mA
0.25
0.29
V
V
F2
I
F
=
100 mA
0.39
0.42
V
Reverse current
I
R1
V
R
=
10 V
25
µ
A
I
R2
V
R
=
30 V
120
µ
A
Terminal capacitance
C
t
V
R
=
0 V, f
=
1 MHz
11
pF
Reverse recovery time
*
t
rr
I
F
=
I
R
=
100 mA
1
ns
I
rr
=
10 mA, R
L
=
100
Ω
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Marking Symbol: 8M
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz
4. *: t
rr
measurement circuit
1: Anode
2: Cathode
SSSMini2-F2 Package
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
90%
t
p
=
2
µ
s
t
r
=
0.35 ns
δ
=
0.05
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
Ω
10%
Input Pulse
Output Pulse
I
rr
=
10 mA
t
r
t
p
t
rr
I
F
t
t
Bias Application Unit (N-50BU)
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form
Analyzer
(SAS-8130)
R
i
=
50
Ω
V
R
A
5
°
5
°
0.27
1
2
1.40
±0.05
0.52
±0.03
1.00
±0.05
0.60
±0.05
0.20
±0.05
0 to 0.01
0.20
±0.05
0.15 max.
+0.05
–0.02
0.12
+0.05
–0.02
This product complies with the RoHS Directive (EU 2002/95/EC).
