Switching Diodes
1
Publication date: November 2007
SKF00094AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2J1150G
Silicon epitaxial planar type
For small power current rectification
■
Features
•
S-mini type package, allowing high-density mounting
•
High reverse voltage V
R
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
=
200 mA
1.2
V
Reverse current
I
R
V
R
=
200 V
200
nA
Terminal capacitance
C
t
V
R
=
0 V, f
=
1 MHz
4.5
pF
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
200
V
Maximum peak reverse voltage
V
RM
200
V
Output current
I
O
200
mA
Repetitive peak forward current
I
FRM
600
µ
A
Non-repetitive peak forward
I
FSM
1
A
surge current
*
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Note) *: t
=
l s
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 3 MHz.
■
Package
•
Code
SMini2-F3
•
Pin Name
1: Anode
2: Cathode
■
Marking Symbol: 1F
