1
Publication date: March 2004
SKL00012BED
PIN diodes
MA2SP05
Silicon epitaxial planar type
For high frequency attenuator
■
Features
•
High performance forward current I
F
controlled forward dy-
namic resistance r
f
•
Small terminal capacitance C
t
•
Miniature package and surface mounting type
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
60
V
Forward current
I
F
50
mA
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Marking Symbol: 6P
1: Anode
2: Cathode
EIAJ: SC-79
SSMini2-F1 Package
0.80
+0.05
–0.03
0.60
+0.05
–0.03
0.12
+0.05
–0.02
1.20
+0.05 –0.03
0
+0
–0.05
0.30
±
0.05
0.01
±
0.01
1.60
±
0.05
0.01
±
0.01
1
2
0.80
±
0.05
(0.80)
(0.60)
(0.15)
(0.60)
5˚
5˚
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
=
10 mA
1.0
V
Reverse current
I
R
V
R
=
60 V
100
nA
Terminal capacitance
C
t
V
R
=
0 V, f
=
1 MHz
2.4
pF
Forward dynamic resistance
r
f
I
F
=
10 mA, f
=
100 MHz
5.5
Ω
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
This product complies with the RoHS Directive (EU 2002/95/EC).
