Schottky Barrier Diodes (SBD)
1
Publication date: April 2004
SKH00032BED
MA2YD17
Silicon epitaxial planar type
For high frequency rectification
■
Features
•
Reverse voltage V
R
=
100 V is guaranteed
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
100
V
Maximum peak reverse voltage
V
RM
100
V
Forward current (Average)
I
F(AV)
300
mA
Non-repetitive peak forward
I
FSM
1.5
A
surge current
*
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
−
55 to
+
125
°
C
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Marking Symbol: 2T
1: Anode
2: Cathode
Mini2-F1 Package
Unit: mm
5˚
1.6
±
0.1
1
2
0.80
±
0.05
0.55
±
0.1
0.16
+0.1
–0.06
3.5
±
0.1
2.6
±
0.1
0.45
±
0.1
5˚
0 to 0.1
0 to 0.3
0 to 0.1
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
=
300 mA
0.50
0.58
V
Reverse current
I
R
V
R
=
100 V
200
µ
A
Terminal capacitance
C
t
V
R
=
0 V, f
=
1 MHz
100
pF
Reverse recovery time
*
t
rr
I
F
=
I
R
=
100 mA
7
ns
I
rr
=
0.1 I
R
, R
L
=
100
Ω
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
t
p
=
2
µ
s
t
r
=
0.35 ns
δ =
0.05
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
Ω
10%
Input Pulse
Output Pulse
I
rr
=
0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. *: t
rr
measurement circuit
This product complies with the RoHS Directive (EU 2002/95/EC).
