Schottky Barrier Diodes (SBD)
1
Publication date: February 2005
SKH00066CED
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F1
I
F
=
1 mA
0.41
V
V
F2
I
F
=
35 mA
1.0
V
Reverse current
I
R
V
R
=
15 V
200
nA
Terminal capacitance
C
t
V
R
=
0 V, f
=
1 MHz
1.2
pF
Dynamic resistance
R
d
I
F
=
5 mA
40
Ω
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
20
V
Maximum peak reverse voltage
V
RM
20
V
Forward current
Single
I
F
35
mA
Series
25
Peak forward current
Single
I
FM
100
mA
Series
70
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
−
55 to
+
125
°
C
MA3SE01
Silicon epitaxial planar type
For cellular phone
■
Features
•
High-frequency wave detection is possible
•
Low forward voltage V
F
•
Small junction-capacitance
■
Absolute Maximum Ratings
T
a
=
25
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Internal Connection
Marking Symbol: M6A
1
2
3
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
Anode 2
EIAJ : SC-81
SSMini3-F2 Package
Unit: mm
0.28
±
0.05
3
1
2
0.28
±
0.05
(0.80)
1.60
+0.05
–0.03
0.12
+0.05
–0.02
0.60
+0.05
–0.03
(0.80)
(0.51)
(0.51)
0 to 0.1
(0.15)
3˚
(0.44)
(0.44)
0.88
(0.375)
+0.05
–0.03
0.80
±
0.05
(0.80)
1.60
±
0.05
3˚
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz
This product complies with the RoHS Directive (EU 2002/95/EC).
