Switching Diodes
1
Publication date: March 2004
SKF00042CED
MA3X199
(MA199)
Silicon epitaxial planar type
For high voltage switching circuit
■
Features
•
High breakdown voltage: V
R
=
200 V
•
Short reverse recovery time t
rr
•
Automatic mounting is possible
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
200
V
Repetitive peak reverse voltage
V
RRM
250
V
Forward current (Average)
I
F(AV)
100
mA
Repetitive peak forward current
I
FRM
225
mA
Non-repetitive peak forward
I
FSM
500
mA
surge current
*
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
=
100 mA
1.2
V
Reverse current
I
R
V
R
=
200 V
1.0
µ
A
Terminal capacitance
C
t
V
R
=
0 V, f
=
1 MHz
3.0
pF
Reverse recovery time
*
t
rr
I
F
=
I
R
=
10 mA
60
ns
I
rr
=
1 mA, R
L
=
100
Ω
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 20 MHz.
3. *: t
rr
measurement circuit
Internal Connection
Marking Symbol: M3A
Note) *: t
=
1 s
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
2
1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5˚
10˚
0 to 0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
1
2
3
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
t
p
=
2
µ
s
t
r
=
0.35 ns
δ
=
0.05
I
F
=
10 mA
I
R
=
10 mA
R
L
=
100
Ω
10%
Input Pulse
Output Pulse
I
rr
=
1mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
1: Anode
2: N.C.
3: Cathode
EIAJ: SC-59
Mini3-G1 Package
Note) The part number in the parenthesis shows conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).
