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Schottky Barrier Diodes (SBD)

1

Publication date: April 2004

SKH00097BED

MA3Z792D 

(MA792WA)

, MA3Z792E 

(MA792WK)

Silicon epitaxial planar type

For super high speed switching

For small current rectification

Features

Two MA3Z792 (MA792) is contained in one package

Forward current (Average) I

F(AV)

 

=

 100 mA rectification is possible

Optimum for high frequency rectification because of its short
reverse recovery time t

rr

Low forward voltage V

F

 and good rectification efficiency

Absolute Maximum Ratings  

T

a

 

=

 

25

°

C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward voltage

V

F

I

F

 

=

 100 mA

0.55

V

Reverse current

I

R

V

R

 

=

 30 V

15

µ

A

Terminal capacitance

C

t

V

R

 

=

 0 V, f 

=

 1 MHz

20

pF

Reverse recovery time 

*

t

rr

I

F

 

=

 I

R

 

=

 100 mA

2

ns

I

rr

 

=

 10 mA, R

L

 

=

 100 

Electrical Characteristics

  T

a

 

=

 

25

°

±

 3

°

C

Parameter

Symbol

Rating

Unit

Reverse voltage

V

R

30

V

Repetitive peak reverse voltage

V

RRM

30

V

Forward current

Single

I

F

100

mA

Double 

*1

70

Peak forward

Single

I

FM

300

mA

current

Double 

*1

200

Non-repetitive peak forward

I

FSM

1

A

surge current 

*2

Junction temperature

T

j

125

°

C

Storage temperature

T

stg

55 to

 +

125

°

C

Bias Application Unit (N-50BU)

90%

Pulse Generator
(PG-10N)
R

s

 

50 

Wave Form Analyzer
(SAS-8130)
R

i

 

50 

t

p

 

µ

s

t

r

 

0.35 ns

δ = 

0.05

I

F

 

=

 100 mA

I

R

 

=

 100 mA

R

L

 

=

 100 

10%

Input Pulse

Output Pulse

I

rr

 

=

 10 mA

t

r

t

p

t

rr

V

R

I

F

t

t

A

SMini3-F1 Package

Marking Symbol

 MA3Z792D: 

M3Y

 MA3Z792E: 

M3Z

Internal Connection

1

2

3

1

2

3

D

E

MA3Z792D MA3Z792E

1 Cathode 1 Anode 1
2 Cathode 2 Anode 2
3 Anode

Cathode

Unit: mm

0.3

2.0

±

0.2

1.3

±

0.1

(0.65)

1

3

2

(0.65)

0.9

±

0.1

2.1

±

0.1

1.25

±

0.1

0 to 0.1

(0.15)

(0.425)

+0.1

–0

0.15

+0.1

–0.05

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

3. Absolute frequency of input and output is 250 MHz.
4.*: t

rr

 measurement circuit

Note) The part numbers in the parenthesis show conventional part number.

Note) *1: Value of each diode in double diodes used.

*2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)

This product complies with the RoHS Directive (EU 2002/95/EC).

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