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Schottky Barrier Diodes (SBD)

1

Publication date: April 2004

SKH00103BED

MA4X713 

(MA713)

Silicon epitaxial planar type

For switching

For wave detection

Features

Two isolated elements are contained in one package, allowing
high-density mounting

Two MA3X704A (MA704A) is contained in one package (of a
type in the same direction)

Forward voltage V

F

 , optimum for low voltage rectification

Optimum for high frequency rectification because of its short
reverse recovery time t

rr

Absolute Maximum Ratings  

T

a

 

=

 25

°

C

Parameter

Symbol

Rating

Unit

Reverse voltage

V

R

30

V

Maximum peak reverse voltage

V

RM

30

V

Peak forward

Single

I

FM

150

mA

current

Double 

*

110

Forward current

Single

I

F

30

mA

Double 

*

20

Junction temperature

T

j

125

°

C

Storage temperature

T

stg

55 to

 +

125

°

C

Internal Connection

Marking Symbol: M1N

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward voltage

V

F1

I

F

 

=

 1 mA

0.4

V

V

F2

I

F

 

=

 30 mA

1.0

Reverse current

I

R

V

R

 

=

 30 V

1

µ

A

Terminal capacitance

C

t

V

R

 

=

 1 V, f 

=

 1 MHz

1.5

pF

Reverse recovery time 

*

t

rr

I

F

 

=

 I

R

 

=

 10 mA

1.0

ns

I

rr

 

=

 1 mA, R

L

 

=

 100 

Detection efficiency

η

V

in

 

=

 3 V

(peak)

 , f 

=

 30 MHz

65

%

R

L

 

=

 3.9 k

, C

L

 

=

 10 pF

Electrical Characteristics

  T

a

 

=

 25

°

C

 

±

 

3

°

C

4

1

3

2

Bias Application Unit (N-50BU)

90%

Pulse Generator
(PG-10N)
R

s

 

50 

Wave Form Analyzer
(SAS-8130)
R

i

 

50 

t

p

 

µ

s

t

r

 

0.35 ns

δ = 

0.05

I

F

 

10 mA

I

R

 

10 mA

R

L

 

100 

10%

Input Pulse

Output Pulse

I

rr

 

1 mA

t

r

t

p

t

rr

V

R

I

F

t

t

A

Unit: mm

1: Cathode 1
2: Cathode 2
3: Anode 2
4: Anode 1

EIAJ: SC-61

Mini4-G1 Package

2.90

+0.02

–0.05

0.16

+0.1

–0.06

0.4

±

0.2

10˚

0.60

+0.10

–0.05

1.1

+0.2 –0.1

1.1

+0.3 –0.1

1.50

+0.25 –0.05

2.8

+0.2 –0.3

1.9

±

0.2

(0.65)

(0.2)

(0.95)

(0.95)

0 to 0.1

3

4

2

1

0.5R

Note) *: Value of each diode in double diodes used.

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

3. Absolute frequency of input and output is 2 GHz.

4. *: t

rr

 measurement circuit

Note) The part number in the parenthesis shows conventional part number.

This product complies with the RoHS Directive (EU 2002/95/EC).

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